Datasheet > IAUZ30N08S5N186

IAUZ30N08S5N186

更新时间： 2024-11-21 14:53:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	974K
描述
The IAUZ30N08S5N186 is a 18.6mR 80V MOSFET in a 3.3 x 3.3 mm2 S3O8 package, using Infineon’s leading OptiMOS? 5 technology. Next to others it is used in pumps, battery management systems as well as ADAS applications.

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IAUZ30N08S5N186 数据手册

IAUZ30N08S5N186

OptiMOS^™-5 Power Transistor

Product Summary

V_DS

18.6

Features

R_DS(on),max

I_D

• OptiMOS™ power MOSFET for automotive applications

• N-channel - Enhancement mode - Normal Level

• MSL1 up to 260°C peak reflow

• 175 °C operating temperature

PG-TSDSON-8-32

• Green product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

PG-TSDSON-8-32

IAUZ30N08S5N186

5N08186

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

V _GS=10 V, Chip

limitation^1,2)

I _D

Drain current

V _GS=10V, DC current

T _a=85 °C, V _GS=10 V,

R_thJAon 2s2p ^2,3)

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

120

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=15 A

I _AS

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.1

page 1

2021-06-18

12 3 4 5 6 7...10

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