Datasheet > IAUTN06S5N008G

IAUTN06S5N008G

更新时间： 2024-11-21 11:14:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	1436K
描述
The IAUTN06S5N008G is a 0.78 mΩ, 60 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS™ 5 technology. Next to other applications, the device is designed for HV-LV DCDC converter.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IAUTN06S5N008G 数据手册

IAUTN06S5N008G

Automotive MOSFET

OptiMOS™ 5 Power-Transistor

PG-HSOG-8-1

Features

Tab

• OptiMOS™ power MOSFET for automotive applications

• N-channel – enhancement mode – normal level

• Extended qualification beyond AEC-Q101

• Enhanced electrical testing

• Robust design

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• RoHS compliant

• 100% avalanche tested

Potential applications

General automotive applications.

Product validation

Qualified for automotive applications. Product validation according to AEC-Q101.

Product Summary

V_DS

0.78 mΩ

504

R_DS(on)

I_D(chip limited)

Type

Package

Marking

IAUTN06S5N008G

PG-HSOG-8-1

5N06N008

Data Sheet

Rev. 1.0

Please read the Important Notice and Warnings at the end of this document

www.infineon.com/mosfets

2023-02-08

12 3 4 5 6 7...12

中文翻译

下载PDF

与IAUTN06S5N008G相关器件

型号	品牌	获取价格	描述	数据表
IAUTN06S5N008T	INFINEON	获取价格	The IAUTN06S5N008T is a 0,79 mΩ, topside-cool
IAUTN12S5N017	INFINEON	获取价格	The IAUTN12S5N017 is a 1.7 mΩ, 120 V MOSFET c
IAUTN12S5N018G	INFINEON	获取价格	The IAUTN12S5N018G is a 1.8 m?, 120 V MOSFET
IAUTN12S5N018T	INFINEON	获取价格	The IAUTN12S5N018T is a 1.8 m?, topside-coole
IAUZ18N10S5L420	INFINEON	获取价格	车规级MOSFET
IAUZ20N08S5L300	INFINEON	获取价格	车规级MOSFET
IAUZ30N06S5L140	INFINEON	获取价格	车规级MOSFET
IAUZ30N08S5N186	INFINEON	获取价格	The IAUZ30N08S5N186 is a 18.6mR 80V MOSFET in
IAUZ30N10S5L240	INFINEON	获取价格	车规级MOSFET
IAUZ40N06S5L050	INFINEON	获取价格	The new OptiMOS? 5 technology for 60V MOSFETs in the industry standard S3O8 (3x3mm2) small