5秒后页面跳转
HYS64V16220GU-7.5-B PDF预览

HYS64V16220GU-7.5-B

更新时间: 2024-11-25 21:00:51
品牌 Logo 应用领域
英飞凌 - INFINEON 动态存储器内存集成电路
页数 文件大小 规格书
18页 120K
描述
Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, DIMM-168

HYS64V16220GU-7.5-B 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:,针数:168
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.74
访问模式:DUAL BANK PAGE BURST最长访问时间:5.4 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-XDMA-N168
内存密度:2147483648 bit内存集成电路类型:SYNCHRONOUS DRAM MODULE
内存宽度:64功能数量:1
端口数量:1端子数量:168
字数:33554432 words字数代码:32000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32MX64
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY认证状态:Not Qualified
自我刷新:YES最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

HYS64V16220GU-7.5-B 数据手册

 浏览型号HYS64V16220GU-7.5-B的Datasheet PDF文件第2页浏览型号HYS64V16220GU-7.5-B的Datasheet PDF文件第3页浏览型号HYS64V16220GU-7.5-B的Datasheet PDF文件第4页浏览型号HYS64V16220GU-7.5-B的Datasheet PDF文件第5页浏览型号HYS64V16220GU-7.5-B的Datasheet PDF文件第6页浏览型号HYS64V16220GU-7.5-B的Datasheet PDF文件第7页 
HYS 64/72V8300/16220GU  
SDRAM-Modules  
3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module  
3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module  
168-Pin Unbuffered DIMM Modules  
• 168-Pin unbuffered 8-Byte Dual-In-Line  
SDRAM Modules for PC main memory  
applications  
• Programmed Latencies:  
Product Speed  
CL tRCD  
tRP  
3
-7.5  
-8  
PC133  
PC100  
3
2
3
2
• PC100 and PC133 versions  
2
• 1 bank 8M × 64, 8M × 72 and 2 bank  
16M × 64, 16M × 72 organzation  
• Single +3.3 V(±0.3 V) Power Supply  
• Optimized for byte-write non-parity (x64) or  
ECC (x72) applications  
• Programmable CAS Latency, Burst Length,  
and Wrap Sequence  
(Sequential and Interleave)  
• JEDEC standard Synchronous DRAMs  
(SDRAM)  
• Auto-Refresh (CBR) and Self-Refresh  
• Decoupling capacitors mounted on substrate  
• All inputs and outputs are LVTTL compatible  
• Serial Presence Detect with E2PROM  
• Fully PC board layout compatible to INTEL’s  
Rev. 1.0 Module Specification  
• SDRAM Performance:  
-7.5  
-8  
Unit  
• Utilizes 8M × 8 SDRAMs in TSOPII-54  
packages with 4096 refresh cycles every  
64 ms  
PC133 PC100  
fCK Clock  
Frequency  
(max.)  
133  
100  
6
MHz  
• 133.35 mm × 31.75 mm × 4,00 mm card size  
with gold-contact pads  
tAC Clock Access 5.4  
ns  
Time  
The HYS 64(72)8300 and HYS 64(72)16220 are industry-standard 168-pin 8-byte Dual In-line  
Memory Modules (DIMMs) which are organized as 8M × 64, 8M × 72 in 1 bank and 16M × 64 and  
16M × 72 in two banks of high-speed memory arrays designed with 64M Synchronous DRAMs  
(SDRAMs) for non-parity and ECC applications. The DIMMs use -7.5 speed sorted 8M × 8 SDRAM  
devices in TSOP54 packages to meet the PC133-333 requirements and use -8 components for the  
standard PC100-222 applications. Decoupling capacitors are mounted on the PC board. The PC  
board design is in accordance with INTEL’s PC SDRAM Rev. 1.0 Module Specification. The DIMMs  
have Serial Presence Detect, implemented with a serial E2PROM using the two-pin I2C protocol.  
The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available  
to the end user. All INFINEON 168-pin DIMMs provide a high performance, flexible 8-byte interface  
in a 133.35 mm long footprint, with 1.25“ (31.75 mm) height.  
Data Book  
1
12.99  

与HYS64V16220GU-7.5-B相关器件

型号 品牌 获取价格 描述 数据表
HYS64V16220GU-8 INFINEON

获取价格

3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module
HYS64V16220GU-8B INFINEON

获取价格

3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module
HYS64V16220GU-8-B INFINEON

获取价格

Synchronous DRAM Module, 32MX64, 6ns, CMOS, DIMM-168
HYS64V16220GU-8-X INFINEON

获取价格

Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168
HYS64V16300GU INFINEON

获取价格

3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte S
HYS64V16300GU-7.5 ETC

获取价格

x64 SDRAM Module
HYS64V16300GU-7.5-C INFINEON

获取价格

Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168
HYS64V16300GU-7.5-C2 INFINEON

获取价格

3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte S
HYS64V16300GU-75-C2 INFINEON

获取价格

3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte S
HYS64V16300GU-7-C2 INFINEON

获取价格

3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte S