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HYS64V2100GCU-10 PDF预览

HYS64V2100GCU-10

更新时间: 2024-11-24 22:28:51
品牌 Logo 应用领域
英飞凌 - INFINEON 动态存储器
页数 文件大小 规格书
12页 78K
描述
3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module

HYS64V2100GCU-10 数据手册

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3.3V 2M x 64-Bit SDRAM Module  
3.3V 2M x 72-Bit SDRAM Module  
HYS64V2100G(C)U-10  
HYS72V2100G(C)U-10  
168 pin unbuffered DIMM Modules  
168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module  
for PC main memory applications  
1 bank 2M x 64, 2M x 72 organisation  
Optimized for byte-write non-parity or ECC applications  
Fully PC66 layout compatible  
JEDEC standard Synchronous DRAMs (SDRAM)  
Performance:  
-10  
fCK  
tAC  
Max. Clock frequency  
66 MHz @ CL=2  
100 MHz @ CL=3  
Max. access time from clock  
9 ns @ CL=2  
8 ns @ CL=3  
Single +3.3V(± 0.3V ) power supply  
Programmable CAS Latency, Burst Length and Wrap Sequence  
(Sequential & Interleave)  
Auto Refresh (CBR) and Self Refresh  
Decoupling capacitors mounted on substrate  
All inputs, outputs are LVTTL compatible  
2
Serial Presence Detect with E PROM  
Utilizes eight / nine 2M x 8 SDRAMs in TSOPII-44 packages  
4096 refresh cycles every 64 ms  
Gold contact pad  
Card Size: 133,35mm x 29,21mm x 3,00mm for HYS64/72V2100GU  
HYS64/72V2100GCU in chip-on-board technique  
Card Size : 133,35mm x 25,40mm x 3,00mm for HYS64/72V2100GCU  
Semiconductor Group  
1
12.97  

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