Datasheet > HYS64V32220GD-8-C2

HYS64V32220GD-8-C2

更新时间： 2024-11-20 23:57:31

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
13页	84K
描述
x64 SDRAM Module

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3.3V SDRAM Modules

HYS64V32220GD(L)

256MB PC100/PC133 144 pin SO-DIMM SDRAM Modules

Datasheet

• 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules

for notebook applications

• Two bank 32M x 64 (256 MByte) non-parity module organisation

• Performance:

-7.5

-8

PC133

3-3-3

PC100

2-2-2

Units

f_CK

t_AC

Clock frequency (max.)

Clock access time

133

5.4

100

MHz

• Single +3.3V(± 0.3V ) power supply

• Programmable CAS Latency, Burst Length and Wrap Sequence

(Sequential & Interleave)

• Auto Refresh (CBR) and Self Refresh

• Decoupling capacitors mounted on substrate

• All inputs, outputs are LVTTL compatible

• Serial Presence Detect with E²PROM

• Eight 256Mbit SDRAM components in TSOP54 packages with 16M x 16 organisation

in two memory banks

• 8192 refresh cycles every 64 ms

• Standard and Low-Power “L” versions

• Gold contact pad, JEDEC MO-190 outline dimensions

• This module family is fully compliant with the latest INTEL SO-DIMM layout and electrical

specifications

• The -7.5 (PC133-333) module version is fully backward compatible to PC100-222 operation

• Importante Notice:

This SO-DIMM module is based on 256Mbit SDRAM technology and can be

used in applications only, where 256Mbit addressing is supported.

INFINEON Technologies

3.01

12 3 4 5 6 7...13

中文翻译

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