5秒后页面跳转
捷配首页

Datasheet > 存储 > DRAM> HYMD564G726A8-H
HYMD564G726A8-H PDF预览

HYMD564G726A8-H

更新时间： 2024-11-21 05:38:51
品牌 Logo 应用领域
海力士 - HYNIX 存储内存集成电路动态存储器双倍数据速率时钟
页数 文件大小 规格书
16页 261K
描述
Registered DDR SDRAM DIMM

阅读下载

中文翻译

获取价格

HYMD564G726A8-H 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：DIMM包装说明：DIMM, DIMM184
针数：184Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.36
风险等级：5.92Is Samacsys：N
访问模式：SINGLE BANK PAGE BURST最长访问时间：0.75 ns
其他特性：AUTO/SELF REFRESH最大时钟频率 (fCLK)：133 MHz
I/O 类型：COMMONJESD-30 代码：R-XDMA-N184
内存密度：4831838208 bit内存集成电路类型：DDR DRAM MODULE
内存宽度：72功能数量：1
端口数量：1端子数量：184
字数：67108864 words字数代码：64000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：64MX72
输出特性：3-STATE封装主体材料：UNSPECIFIED
封装代码：DIMM封装等效代码：DIMM184
封装形状：RECTANGULAR封装形式：MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）：NOT SPECIFIED电源：2.5 V
认证状态：Not Qualified刷新周期：8192
自我刷新：YES最大待机电流：0.09 A
子类别：DRAMs最大压摆率：3.42 mA
最大供电电压 (Vsup)：2.7 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：2.5 V表面贴装：NO
技术：CMOS温度等级：COMMERCIAL
端子形式：NO LEAD端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

HYMD564G726A8-H 数据手册

 浏览型号HYMD564G726A8-H的Datasheet PDF文件第2页浏览型号HYMD564G726A8-H的Datasheet PDF文件第3页浏览型号HYMD564G726A8-H的Datasheet PDF文件第4页浏览型号HYMD564G726A8-H的Datasheet PDF文件第5页浏览型号HYMD564G726A8-H的Datasheet PDF文件第6页浏览型号HYMD564G726A8-H的Datasheet PDF文件第7页 
64Mx72 bits  
Registered DDR SDRAM DIMM  
HYMD564G726A(L)8-M/K/H/L  
DESCRIPTION  
Preliminary  
Hynix HYMD564G726A(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line  
Memory Modules(DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMD564G726A(L)8-M/  
K/H/L series consists of nine 64Mx8 DDR SDRAM in 400mil TSOPII packages on a 184pin glass-epoxy substrate.  
Hynix HYMD564G726A(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of  
industry stanard. It is suitable for easy interchange and addition.  
Hynix HYMD564G726A(L)8-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous  
operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs  
are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both ris-  
ing and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth.  
All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and  
burst lengths allow variety of device operation in high performance memory system.  
Hynix HYMD564G726A(L)8-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function  
is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to iden-  
tify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.  
FEATURES  
•
512MB (64M x 72) Registered DDR DIMM based on  
64Mx8 DDR SDRAM  
•
Fully differential clock operations (CK & /CK) with  
125MHz/133MHz  
•
JEDEC Standard 184-pin dual in-line memory mod-  
ule (DIMM)  
•
•
Programmable CAS Latency 2 / 2.5 supported  
Programmable Burst Length 2 / 4 / 8 with both  
sequential and interleave mode  
•
•
•
•
•
Error Check Correction (ECC) Capability  
Registered inputs with one-clock delay  
•
•
•
•
tRAS Lock-out function supported  
Phase-lock loop (PLL) clock driver to reduce loading  
2.5V +/- 0.2V VDD and VDDQ Power supply  
Internal four bank operations with single pulsed RAS  
Auto refresh and self refresh supported  
8192 refresh cycles / 64ms  
All inputs and outputs are compatible with SSTL_2  
interface  
ORDERING INFORMATION  
Part No.  
Power Supply  
Clock Frequency  
Interface  
Form Factor  
HYMD564G726A(L)8-M  
HYMD564G726A(L)8-K  
HYMD564G726A(L)8-H  
HYMD564G726A(L)8-L  
133MHz (*DDR266 2-2-2)  
133MHz (*DDR266A)  
133MHz (*DDR266B)  
125MHz (*DDR200)  
VDD=2.5V  
VDDQ=2.5V  
184pin Registered DIMM  
5.25 x 1.7 x 0.15 inch  
SSTL_2  
* JEDEC Defined Specifications compliant  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.1/Jan. 2003  
1
1234567...16

中文翻译

下载PDF

与HYMD564G726A8-H相关器件

型号 品牌 获取价格 描述 数据表
HYMD564G726A8-K HYNIX

获取价格

 		Registered DDR SDRAM DIMM
HYMD564G726A8-L HYNIX

获取价格

 		Registered DDR SDRAM DIMM
HYMD564G726A8-M HYNIX

获取价格

 		Registered DDR SDRAM DIMM
HYMD564G726A8M-H HYNIX

获取价格

 		Low Profile Registered DDR SDRAM DIMM
HYMD564G726A8M-K HYNIX

获取价格

 		Low Profile Registered DDR SDRAM DIMM
HYMD564G726A8M-L HYNIX

获取价格

 		Low Profile Registered DDR SDRAM DIMM
HYMD564G726A8M-M HYNIX

获取价格

 		Low Profile Registered DDR SDRAM DIMM
HYMD564G726AL8-H HYNIX

获取价格

 		Registered DDR SDRAM DIMM
HYMD564G726AL8-K HYNIX

获取价格

 		Registered DDR SDRAM DIMM
HYMD564G726AL8-L HYNIX

获取价格

 		Registered DDR SDRAM DIMM

与HYMD564G726A8-H相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证