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HYMD564G726A8M-K PDF预览

HYMD564G726A8M-K

更新时间: 2024-11-20 05:38:47
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器双倍数据速率
页数 文件大小 规格书
16页 260K
描述
Low Profile Registered DDR SDRAM DIMM

HYMD564G726A8M-K 数据手册

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64Mx72 bits  
Low Profile Registered DDR SDRAM DIMM  
HYMD564G726A(L)8M-M/K/H/L  
Preliminary  
DESCRIPTION  
Hynix HYMD564G726A(L)8M-M/K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM  
Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix  
HYMD564G726A(L)8M-M/K/H/L series consists of nine 64Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin  
glass-epoxy substrate. Hynix HYMD564G726A(L)8M-M/K/H/L series provide a high performance 8-byte interface in  
5.25" width form factor of industry standard. It is suitable for easy interchange and addition.  
Hynix HYMD564G726A(L)8M-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous  
operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs  
are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both ris-  
ing and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth.  
All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and  
burst lengths allow variety of device operation in high performance memory system.  
Hynix HYMD564G726A(L)8M-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect func-  
tion is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to  
identify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.  
FEATURES  
512MB (64M x 72) Low Profile Registered DDR  
DIMM based on 64Mx8 DDR SDRAM  
Fully differential clock operations (CK & /CK) with  
125MHz/133MHz  
JEDEC Standard 184-pin dual in-line memory mod-  
ule (DIMM)  
Programmable CAS Latency 2 / 2.5 supported  
Error Check Correction (ECC) Capability  
Registered inputs with one-clock delay  
Programmable Burst Length 2 / 4 / 8 with both  
sequential and interleave mode  
tRAS Lock-out function supported  
Phase-lock loop (PLL) clock driver to reduce loading  
2.5V +/- 0.2V VDD and VDDQ Power supply  
Internal four bank operations with single pulsed RAS  
Auto refresh and self refresh supported  
8192 refresh cycles / 64ms  
All inputs and outputs are compatible with SSTL_2  
interface  
ORDERING INFORMATION  
Part No.  
Power Supply  
Clock Frequency  
Interface  
Form Factor  
HYMD564G726A(L)8M-M  
HYMD564G726A(L)8M-K  
HYMD564G726A(L)8M-H  
HYMD564G726A(L)8M-L  
133MHz (*DDR266 2-2-2)  
133MHz (*DDR266A)  
133MHz (*DDR266B)  
125MHz (*DDR200)  
VDD=2.5V  
VDDQ=2.5V  
184pin Registered DIMM  
5.25 x 1.2 x 0.15 inch  
SSTL_2  
* JEDEC Defined Specifications compliant  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.1/Jan. 2003  
1

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