Datasheet > HY63V8400T2-10

HY63V8400T2-10

更新时间： 2024-11-12 09:38:39

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器光电二极管
页数	文件大小	规格书
8页	126K
描述
Standard SRAM, 512KX8, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

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中文翻译

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数据手册

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HY63V8400T2-10 数据手册

HY63V8400 Series

512Kx8bit CMOS FAST SRAM

PRELIMINARY

DESCRIPTION

FEATURES

The HY63V8400 is a 4,194,304-bit high-speed

Static Random Access Memory organized as

524,288 words by 8-bits. The HY63V8400 uses

eight common input and output lines and has an

output enable pin which operates faster than.

address access time at read cycle. The device is

fabricated using Hyundai's advanced CMOS

process and designed for high-speed circuit

technology. It is particularly well suited for use in

high-density high-speed system applications

Single 3.3V±0.3V Power Supply

Fully static operation and Tri-state output

TTL compatible inputs and outputs

Low data Retention Voltage:

- 2.0V(min) –L-ver. Only

Center Power/Ground Pin Configuration

Standard pin configuration

36pin 400mil SOJ

44pin 400mil TSOP-ll

Product

No.

Supply

Voltage(V)

Speed

(ns)

Operation

Current(mA)

Standby Current(mA)

HY63V8400

3.3

200

190

180

PIN CONNECTION

BLOCK DIAGRAM

ROW

DECODER

I/O1

4 4

4 3

4 2

4 1

4 0

3 9

3 8

3 7

3 6

3 5

3 4

3 3

3 2

3 1

3 0

2 9

2 8

2 7

2 6

2 5

2 4

2 3

N C

A 0

A 1

A 2

A 3

A 4

N C

A 1 8

A 1 7

A 1 6

A 1 5

/O E

I / O 8

I / O 7

V s s

V c c

I / O 6

I / O 5

A 1 4

A 1 3

A 1 2

A 1 1

A 1 0

N C

A18

A17

A16

A15

/OE

I/O8

I/O7

Vss

Vcc

I/O6

I/O5

A14

A13

A12

A11

A10

MEMORY ARRAY

512x1024x8

/C S

I / O 1

I / O 2

V c c

V s s

/CS

I/O1

I/O2

Vcc

Vss

1 0

1 1

1 2

1 3

1 4

1 5

1 6

1 7

1 8

1 9

2 0

2 1

2 2

T S O P - I I

SOJ

I / O 3

I / O 4

/W E

A 5

I/O3

I/O4

/WE

I/O8

A 6

A 7

A 8

A18

A 9

N C

/CS

/OE

/WE

SOJ

TSOP-II

PIN DESCRIPTION

Pin Name

Pin Function

Pin Name

A0~A18

Vcc

Pin Function

Address Input

Power(+3.3V)

Ground

/CS

/WE

/OE

Chip Select

Write Enable

Output Enable

Vss

I/O1~I/O8 Data Input/Output

No Connection

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.02 / Jan.99

Hyundai Semiconductor

12 3 4 5 6 7 8

中文翻译

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与HY63V8400T2-10相关器件

型号	品牌	获取价格	描述	数据表
HY63V8400T2-10I	HYNIX	获取价格	Standard SRAM, 512KX8, 10ns, CMOS, PDSO44
HY63V8400T2-12	HYNIX	获取价格	Standard SRAM, 512KX8, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
HY63V8400T2-12I	HYNIX	获取价格	Standard SRAM, 512KX8, 12ns, CMOS, PDSO44
HY63V8400T2-15	HYNIX	获取价格	Standard SRAM, 512KX8, 15ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
HY6410	ETC	获取价格	Laser Diode Driver
HY64LD16162M	HYNIX	获取价格	1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64LD16162M-DF85C	ETC	获取价格	PSEUDO-STATIC RAM\|1MX16\|CMOS\|BGA\|48PIN\|PLASTIC
HY64LD16162M-DF85E	HYNIX	获取价格	1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64LD16162M-DF85I	HYNIX	获取价格	1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64LD16162M-E	HYNIX	获取价格	1M x 16 bit Low Low Power 1T/1C Pseudo SRAM

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