是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | LFBGA, |
针数: | 90 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.28 |
风险等级: | 5.84 | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 5.4 ns | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-PBGA-B90 | JESD-609代码: | e1 |
长度: | 13 mm | 内存密度: | 536870912 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 32 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 90 | 字数: | 16777216 words |
字数代码: | 16000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 16MX32 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 1.4 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 20 |
宽度: | 11 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HY5V72DLMP-P | HYNIX |
获取价格 |
Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 | |
HY5V72DM-H | HYNIX |
获取价格 |
DRAM | |
HY5V72DM-P | HYNIX |
获取价格 |
DRAM | |
HY5V72DMP-P | HYNIX |
获取价格 |
DRAM | |
HY5V72DSM-H | HYNIX |
获取价格 |
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 | |
HY5V72DSM-P | HYNIX |
获取价格 |
Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 | |
HY5V72DSMP-H | HYNIX |
获取价格 |
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 | |
HY5W26CF-B | ETC |
获取价格 |
x16 SDRAM | |
HY5W26CF-H | ETC |
获取价格 |
SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC | |
HY5W26CF-HF | HYNIX |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54 |