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HY5W2A6CF-PF

更新时间： 2024-11-07 19:10:15
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器内存集成电路
页数 文件大小 规格书
24页 407K
描述
Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54

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HY5W2A6CF-PF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：BGA
包装说明：FBGA, BGA54,9X9,32针数：54
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.02风险等级：5.84
访问模式：FOUR BANK PAGE BURST最长访问时间：7 ns
其他特性：AUTO/SELF REFRESH最大时钟频率 (fCLK)：100 MHz
I/O 类型：COMMON交错的突发长度：1,2,4,8
JESD-30 代码：R-PBGA-B54JESD-609代码：e1
长度：10.5 mm内存密度：134217728 bit
内存集成电路类型：SYNCHRONOUS DRAM内存宽度：16
功能数量：1端口数量：1
端子数量：54字数：8388608 words
字数代码：8000000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：-25 °C
组织：8MX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：FBGA
封装等效代码：BGA54,9X9,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, FINE PITCH峰值回流温度（摄氏度）：260
电源：1.8/2.5,2.5 V认证状态：Not Qualified
刷新周期：4096自我刷新：YES
连续突发长度：1,2,4,8,FP最大待机电流：0.0005 A
子类别：DRAMs最大压摆率：0.155 mA
最大供电电压 (Vsup)：2.7 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：OTHER
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：20宽度：8.3 mm
Base Number Matches：1

HY5W2A6CF-PF 数据手册

 浏览型号HY5W2A6CF-PF的Datasheet PDF文件第2页浏览型号HY5W2A6CF-PF的Datasheet PDF文件第3页浏览型号HY5W2A6CF-PF的Datasheet PDF文件第4页浏览型号HY5W2A6CF-PF的Datasheet PDF文件第5页浏览型号HY5W2A6CF-PF的Datasheet PDF文件第6页浏览型号HY5W2A6CF-PF的Datasheet PDF文件第7页 
HY5W2A6C(L/S)F-F / HY57W2A1620HC(L/S)T-F  
HY5W26CF-F / HY57W281620HCT-F  
4Banks x 2M x 16bits Synchronous DRAM  
DESCRIPTION  
The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs,  
2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld  
PCs.  
The Hynix HY5W2A6CF is a 134,217,728bit CMOS Synchronous Dynamic Random Access Memory. It  
is organized as 4banks of 2,097,152x16.  
The Low Power SDRAM provides for programmable options including CAS latency of 1, 2, or 3, READ  
or WRITE burst length of 1, 2, 4, 8, or full page, and the burst count sequence(sequential or interleave).  
And the Low Power SDRAM also provides for special programmable options including Partial Array Self  
Refresh of a quarter bank, a half bank, 1bank, 2banks, or all banks, Temperature Compensated Self  
Refresh of 15, 45, 70, or 85 degrees C. A burst of Read or Write cycles in progress can be terminated  
by a burst terminate command or can be interrupted and replaced by a new burst Read or Write com-  
mand on any cycle(This pipelined design is not restricted by a 2N rule).  
Deep Power Down Mode is a additional operating mode for Low Power SDRAM. This mode can achieve  
maximum power reduction by removing power to the memory array within each SDRAM. By using this  
feature, the system can cut off alomost all DRAM power without adding the cost of a power switch and  
giving up mother-board power-line layout flexibility.  
FEATURES  
•
•
•
•
•
•
Standard SDRAM Protocol  
Internal 4bank operation  
Voltage : VDD = 2.5V, VDDQ = 1.8V & 2.5V  
LVTTL compatible I/O Interface  
Low Voltage interface to reduce I/O power  
Low Power Features ( HY5W26CF / HY57W281620HCT series can’t support these features)  
- PASR(Partial Array Self Refresh)  
- TCSR(Temperature Compensated Self Refresh)  
- Deep Power Down Mode  
•
•
•
CAS latency of 1, 2, or 3  
Packages : 54ball, 0.8mm pitch FBGA / 54pin, TSOP  
-25 ~ 70C Operation  
128M SDRAM ODERING INFORMATION  
Clock  
CAS  
Part Number  
Organization  
Interface  
Package  
Frequency Latency  
HY5W2A6C(L/S)F-HF  
HY5W26CF-HF  
133MHz  
100MHz  
100MHz  
66Mhz  
3
2
3
2
4banks x 2Mb x 16  
LVTTL  
HY57W2A1620HC(L/S)T-HF  
HY57W281620HCT-HF  
HY5W2A6C(L/S)F-PF  
HY5W26CF-PF  
HY57W2A1620HC(L/S)T-PF  
HY57W281620HCT-PF  
4banks x 2Mb x 16  
4banks x 2Mb x 16  
4banks x 2Mb x 16  
LVTTL  
LVTTL  
LVTTL  
54ball FBGA  
(HY5xxxxxxF)  
54pin TSOP-II  
(HY5xxxxxxT)  
HY5W2A6C(L/S)F-SF  
HY5W26CF-SF  
HY57W2A1620HC(L/S)T-SF  
HY57W281620HCT-SF  
HHY5W2A6C(L/S)F-BF  
HY5W26CF-BF  
HY57W2A1620HC(L/S)T-BF  
HY57W281620HCT-BF  
* HY5xxxxxx-B Series can support 40Mhz CL1 and 33Mhz CL1.  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev. 1.3 / Dec. 01  
1234567...24

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与HY5W2A6CF-PF相关器件

型号 品牌 获取价格 描述 数据表
HY5W2A6CF-S HYNIX

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 		Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54
HY5W2A6CLF-B HYNIX

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 		Synchronous DRAM, 8MX16, 9ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54
HY5W2A6CLF-H ETC

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 		x16 SDRAM
HY5W2A6CLF-HF HYNIX

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 		Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54
HY5W2A6CLF-P HYNIX

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 		Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54
HY5W2A6CLF-PF HYNIX

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 		Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54
HY5W2A6CLF-S HYNIX

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 		Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54
HY5W2A6CSF-B HYNIX

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 		Synchronous DRAM, 8MX16, 9ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54
HY5W2A6CSF-H ETC

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 		SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC
HY5W2A6CSF-HF HYNIX

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 		Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54

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