Datasheet > HY57V651620BTC

HY57V651620BTC

更新时间： 2024-09-14 23:57:11

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
12页	143K
描述
4Mx16\|3.3V\|4K\|H\|SDR SDRAM - 64M

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HY57V651620BTC 数据手册

HY57V651620B

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION

The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which

require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.

HY57V641620B is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchro-

nized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output

voltage levels are compatible with LVTTL.

Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated

by a single control command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of

read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst

read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)

FEATURES

Single 3.3±0.3V power supply ^Note)

•

Auto refresh and self refresh

•

4096 refresh cycles / 64ms

All device pins are compatible with LVTTL interface

Programmable Burst Length and Burst Type

- 1, 2, 4, 8 or Full page for Sequential Burst

- 1, 2, 4 or 8 for Interleave Burst

JEDEC standard 400mil 54pin TSOP-II with 0.8mm

of pin pitch

•

All inputs and outputs referenced to positive edge of

system clock

•

Programmable CAS Latency ; 2, 3 Clocks

•

Data mask function by UDQM or LDQM

Internal four banks operation

ORDERING INFORMATION

Part No.

Clock Frequency

Power

Organization

Interface

Package

HY57V651620BTC-55

HY57V651620BTC-6

HY57V651620BTC-7

HY57V651620BTC-75

HY57V651620BTC-8

HY57V651620BTC-10P

HY57V651620BTC-10S

HY57V651620BTC-10

HY57V651620BLTC-55

HY57V651620BLTC-6

HY57V651620BLTC-7

HY57V651620BLTC-75

HY57V651620BLTC-8

HY57V651620BLTC-10P

HY57V651620BLTC-10S

HY57V651620BLTC-10

183MHz

166MHz

143MHz

133MHz

125MHz

100MHz

183MHz

166MHz

143MHz

133MHz

125MHz

100MHz

Normal

4Banks x 1Mbits

x16

400mil 54pin TSOP II

LVTTL

Low power

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use

of circuits described. No patent licenses are implied.

Rev. 2.1/Mar. 02

12 3 4 5 6 7...12

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与HY57V651620BTC相关器件

型号	品牌	获取价格	描述	数据表
HY57V651620BTC-10	HYNIX	获取价格	4 Banks x 1M x 16Bit Synchronous DRAM
HY57V651620BTC-10P	HYNIX	获取价格	4 Banks x 1M x 16Bit Synchronous DRAM
HY57V651620BTC-10PI	HYNIX	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
HY57V651620BTC-10S	HYNIX	获取价格	4 Banks x 1M x 16Bit Synchronous DRAM
HY57V651620BTC-10SI	HYNIX	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
HY57V651620BTC-55	HYNIX	获取价格	4 Banks x 1M x 16Bit Synchronous DRAM
HY57V651620BTC-6	HYNIX	获取价格	4 Banks x 1M x 16Bit Synchronous DRAM
HY57V651620BTC-6I	HYNIX	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
HY57V651620BTC-7	HYNIX	获取价格	4 Banks x 1M x 16Bit Synchronous DRAM
HY57V651620BTC-75	HYNIX	获取价格	4 Banks x 1M x 16Bit Synchronous DRAM

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