Datasheet > HY57V653220BLTC-10I

HY57V653220BLTC-10I

更新时间： 2024-11-23 23:57:11

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
11页	53K
描述
x32 SDRAM

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中文翻译

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HY57V653220B

4 Banks x 512K x 32Bit Synchronous DRAM

DE S CRIPT ION

T h e H y n i x H Y 5 7 V 6 5 3 2 2 0 B i s a 6 7 , 1 0 8 , 8 6 4 - b i t C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t h e M o b i l e a p p l i c a t i o n s

which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of

524, 288x32.

H Y 5 7 V 6 5 3 2 2 0 B is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and out-

puts are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very

high bandwidth. All input and output voltage levels are compatible with LVTTL.

Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write

cycles initiated by

single control command (Burst length of 1,2,4,8 or full page), and the burst count

sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate

command or can be interrupted and replaced by

design is not restricted by a `2N` rule.)

a new burst read or write command on any cycle. (This pipelined

F EAT URES

•

JEDEC standard 3. 3V power supply

•

Auto refresh and self refresh

•

All device pins are compatible with LVTTL interface

4 0 9 6 r e f r e s h c y c l e s / 6 4 m s

J E D E C s t a n d a r d 4 0 0 m i l 8 6 p i n T S O P - I I w i t h 0 . 5 m m o f

pin pitch

P r o g r a m m a b l e B u r s t L e n g t h a n d B u r s t T y p e

- 1, 2, 4, 8 or full page for Sequential Burst

- 1, 2, 4 or 8 for Interleave Burst

•

All inputs and outputs referenced to positive edge of

system clock

•

D a t a m a s k f u n c t i o n b y D Q M 0 , 1 , 2 a n d 3

Internal four banks operation

•

P r o g r a m m a b l e C A S Latency ; 2, 3 Clocks

Burst Read Single Write operation

OR D E R IN G INF ORMAT ION

Par t No.

Cl ock Fr equency

Powe r

Or gani zat i on

Int er f ace

Package

H Y 5 7 V 6 5 3 2 2 0 B T C - 6 I

H Y 5 7 V 6 5 3 2 2 0 B T C -7 I

H Y 5 7 V 6 5 3 2 2 0 B T C - 1 0 I

H Y 5 7 V 6 5 3 2 2 0 B L T C - 6 I

H Y 5 7 V 6 5 3 2 2 0 B L T C - 7 I

H Y 5 7 V 6 5 3 2 2 0 B L T C - 1 0 I

1 6 6 M H z

14 3 M H z

1 0 0 M H z

1 6 6 M H z

1 4 3 M H z

1 0 0 M H z

4 B a n k s x 5 1 2 K b i t s

x 3 2

N o r m a l

L V T T L

400mil 86pin TSOP II

This document is

a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0. 6/ Aug. 01

12 3 4 5 6 7...11

中文翻译

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与HY57V653220BLTC-10I相关器件

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HY57V653220BLTC-6I	ETC	获取价格	x32 SDRAM
HY57V653220BLTC-7I	ETC	获取价格	x32 SDRAM
HY57V653220BLTC-I	ETC	获取价格	2Mx32\|3.3V\|4K\|5/55/6\|SDR SDRAM - 64M
HY57V653220BTC	HYNIX	获取价格	4 Banks x 512K x 32Bit Synchronous DRAM
HY57V653220BTC-10	HYNIX	获取价格	4 Banks x 512K x 32Bit Synchronous DRAM
HY57V653220BTC-10I	ETC	获取价格	x32 SDRAM
HY57V653220BTC-10P	HYNIX	获取价格	4 Banks x 512K x 32Bit Synchronous DRAM
HY57V653220BTC-5	HYNIX	获取价格	4 Banks x 512K x 32Bit Synchronous DRAM
HY57V653220BTC-55	HYNIX	获取价格	4 Banks x 512K x 32Bit Synchronous DRAM
HY57V653220BTC-6	HYNIX	获取价格	4 Banks x 512K x 32Bit Synchronous DRAM

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