Datasheet > HY57V653220BTC-6I

HY57V653220BTC-6I

更新时间： 2024-11-05 23:57:11

品牌	Logo	应用领域
其他 - ETC		内存集成电路光电二极管 ISM频段动态存储器时钟
页数	文件大小	规格书
11页	53K
描述
x32 SDRAM

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中文翻译

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HY57V653220B

4 Banks x 512K x 32Bit Synchronous DRAM

DE S CRIPT ION

T h e H y n i x H Y 5 7 V 6 5 3 2 2 0 B i s a 6 7 , 1 0 8 , 8 6 4 - b i t C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t h e M o b i l e a p p l i c a t i o n s

which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of

524, 288x32.

H Y 5 7 V 6 5 3 2 2 0 B is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and out-

puts are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very

high bandwidth. All input and output voltage levels are compatible with LVTTL.

Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write

cycles initiated by

single control command (Burst length of 1,2,4,8 or full page), and the burst count

sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate

command or can be interrupted and replaced by

design is not restricted by a `2N` rule.)

a new burst read or write command on any cycle. (This pipelined

F EAT URES

•

JEDEC standard 3. 3V power supply

•

Auto refresh and self refresh

•

All device pins are compatible with LVTTL interface

4 0 9 6 r e f r e s h c y c l e s / 6 4 m s

J E D E C s t a n d a r d 4 0 0 m i l 8 6 p i n T S O P - I I w i t h 0 . 5 m m o f

pin pitch

P r o g r a m m a b l e B u r s t L e n g t h a n d B u r s t T y p e

- 1, 2, 4, 8 or full page for Sequential Burst

- 1, 2, 4 or 8 for Interleave Burst

•

All inputs and outputs referenced to positive edge of

system clock

•

D a t a m a s k f u n c t i o n b y D Q M 0 , 1 , 2 a n d 3

Internal four banks operation

•

P r o g r a m m a b l e C A S Latency ; 2, 3 Clocks

Burst Read Single Write operation

OR D E R IN G INF ORMAT ION

Par t No.

Cl ock Fr equency

Powe r

Or gani zat i on

Int er f ace

Package

H Y 5 7 V 6 5 3 2 2 0 B T C - 6 I

H Y 5 7 V 6 5 3 2 2 0 B T C -7 I

H Y 5 7 V 6 5 3 2 2 0 B T C - 1 0 I

H Y 5 7 V 6 5 3 2 2 0 B L T C - 6 I

H Y 5 7 V 6 5 3 2 2 0 B L T C - 7 I

H Y 5 7 V 6 5 3 2 2 0 B L T C - 1 0 I

1 6 6 M H z

14 3 M H z

1 0 0 M H z

1 6 6 M H z

1 4 3 M H z

1 0 0 M H z

4 B a n k s x 5 1 2 K b i t s

x 3 2

N o r m a l

L V T T L

400mil 86pin TSOP II

This document is

a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0. 6/ Aug. 01

12 3 4 5 6 7...11

中文翻译

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与HY57V653220BTC-6I相关器件

型号	品牌	获取价格	描述	数据表
HY57V653220BTC-7	HYNIX	获取价格	4 Banks x 512K x 32Bit Synchronous DRAM
HY57V653220BTC7DR	HYNIX	获取价格	Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
HY57V653220BTC-7I	ETC	获取价格	x32 SDRAM
HY57V653220BTC-8	HYNIX	获取价格	4 Banks x 512K x 32Bit Synchronous DRAM
HY57V653220BTC-I	ETC	获取价格	2Mx32\|3.3V\|4K\|5/55/6\|SDR SDRAM - 64M
HY57V654010TC-10	ETC	获取价格	x4 SDRAM
HY57V654010TC-12	ETC	获取价格	x4 SDRAM
HY57V654010TC-15	ETC	获取价格	x4 SDRAM
HY57V654011LTC-8	HYNIX	获取价格	Synchronous DRAM, 16MX4, CMOS, TSOP2
HY57V654011TC-10	ETC	获取价格	x4 SDRAM

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