Datasheet > HRW0302A

HRW0302A

更新时间： 2024-09-13 05:36:47

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	35K
描述
Silicon Schottky Barrier Diode

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中文翻译

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数据手册

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HRW0302A 数据手册

SMD Type

Diodes

Silicon Schottky Barrier Diode

HRW0302A

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low forward voltage drop and suitable for

high effifiency rectifying.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

MPAK package is suittable for high density

surface mounting and high speed assembly.

1.Base

2.Emitter

3.collector

Absolute Maxim um Ratings Ta = 25

Param eter

Repetitive peak reverse voltage

Average rectified current

Non-repetitive peak forward surge current

Junction tem perature

Sym bol

Value

Unit

V^RRM

I^O

300

m A

I^FSM(Note 1)

T^j

125

Storage tem perature

Tstg

-55 to + 125

Note

1. 10m sec sine wave 1 pulse

Electrical Characteristics Ta = 25

Parameter

Forward voltage

Symbol

Conditions

IF = 200 mA

Min

Typ

340

Max

0.40

100

Unit

V^F

Reverse current

Capacitance

VR = 20 V

V^R= 0 V, f = 1MHz

Polyimide board

Thermal resistance

R^{th( j-a )}

Marking

S11

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中文翻译

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