Datasheet > HRW0503A

HRW0503A

更新时间： 2024-12-01 12:33:47

品牌	Logo	应用领域
TYSEMI		二极管光电二极管
页数	文件大小	规格书
1页	57K
描述
Low forward voltage drop and suitable for high effifiency rectifying.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HRW0503A 数据手册

Product specification

HRW0503A

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low forward voltage drop and suitable for

high effifiency rectifying.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

-0.1

1.9

MPAK package is suittable for high density

surface mounting and high speed assembly.

1.Base

2.Emitter

3.collector

Absolute M axim um R atings Ta = 25

Param eter

Repetitive peak reverse voltage

Average rectified current

Non-repetitive peak forward surge current

Junction tem perature

Sym bol

Value

Unit

V^{R R M}

I^O

I^{FSM (N ot e 1)}

T^j

500

m A

125

Storage tem perature

T^stg

-55 to + 125

Note

1. 50Hz sine wave 1 pulse

Electrical Characteristics Ta = 25

Parameter

Forward voltage

Reverse current

Capacitance

Symbol

Conditions

Min

Typ

Max

0.55

Unit

V^F

I^F= 500 mA

VR = 30 V

V^R= 0 V, f = 1MHz

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

中文翻译

下载PDF

与HRW0503A相关器件

型号	品牌	获取价格	描述	数据表
HRW0503ATL	HITACHI	获取价格	暂无描述
HRW0503ATL-E	RENESAS	获取价格	0.5A, 30V, SILICON, SIGNAL DIODE
HRW0503ATR	RENESAS	获取价格	暂无描述
HRW0503ATR	HITACHI	获取价格	Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon
HRW0702A	TYSEMI	获取价格	MPAK package is suittable for high density surface mounting and high speed assembly
HRW0702A	RENESAS	获取价格	Silicon Schottky Barrier Diode for Rectifying
HRW0702A	KEXIN	获取价格	Silicon Schottky Barrier Diode
HRW0702A	HITACHI	获取价格	Silicon Schottky Barrier Diode for Rectifying
HRW0702ATL	RENESAS	获取价格	0.7A, 20V, SILICON, SIGNAL DIODE
HRW0702ATL-E	RENESAS	获取价格	0.7A, 20V, SILICON, SIGNAL DIODE