Datasheet > HRW1002AS

HRW1002AS

更新时间： 2024-11-30 23:56:35

品牌	Logo	应用领域
其他 - ETC		二极管功效
页数	文件大小	规格书
3页	24K
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HRW1002AS 数据手册

ADE-208-207A(Z)

HRW1002A S

Silicon Schottky Barrier Diode

for Rectifying

Rev. 1

Aug. 1994

Features

Pin Arrangement

• Low forward voltage drop and suitable for high

effifiency rectifying.

• Same power as TO-220AB.

• Small outline compared with TO-220AB.

• LDPAK S package is suitable for high density

surface mounting.

Anode

Cathode

Anode

Ordering Information

Type No.

Laser Mark

Package Code

HRW1002A S

W1002A

LDPAK S

Absolute Maximum Ratings (Ta = 25°C) *

Item

Symbol

_RRM**

I ***

Value

Unit

Repetitive peak reverse voltage

Average forward current

Non-Repetitive peak forward surge current I_FSM****

Junction temperature

Storage temperature

125

°C

-40 to +125

stg

Per one device

** See Fig.5

*** Square wave, Duty (1/2), Sum of two devices, See Fig.4

**** Sine wave 10msec

Electrical Characteristics (Ta = 25°C) *

Item

Symbol

V_F

Min

—

Typ

—

Max

0.42

1.0

Unit

Test Condition

I _F= 5.0 A

Forward voltage

Reverse current

ESD-capability

I _R

—

V_R= 20 V

—

500

—

C=200pF

Both forward and reverse

direction 1 pulse

Thermal resistance

R_th(j-c)

—

1.5

—

°C/W

Per one device

12 3

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