Datasheet > HRW0503A

HRW0503A

更新时间： 2024-11-05 05:36:47

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	34K
描述
Silicon Schottky Barrier Diode

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中文翻译

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数据手册

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HRW0503A 数据手册

SMD Type

Diodes

Silicon Schottky Barrier Diode

HRW0503A

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low forward voltage drop and suitable for

high effifiency rectifying.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

MPAK package is suittable for high density

surface mounting and high speed assembly.

1.Base

2.Emitter

3.collector

Absolute M axim um R atings Ta = 25

Param eter

Repetitive peak reverse voltage

Average rectified current

Non-repetitive peak forward surge current

Junction tem perature

Sym bol

Value

Unit

V^{R R M}

I^O

I^{FSM (N ot e 1)}

T^j

500

m A

125

Storage tem perature

Tstg

-55 to + 125

Note

1. 50Hz sine wave 1 pulse

Electrical Characteristics Ta = 25

Parameter

Forward voltage

Reverse current

Capacitance

Symbol

Conditions

Min

Typ

Max

0.55

Unit

V^F

I^R

IF = 500 mA

VR = 30 V

V^R= 0 V, f = 1MHz

Marking

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