DC to 28 GHz, GaAs, pHEMT,
MMIC, Low Noise Amplifier
Data Sheet
HMC8401
FEATURES
GENERAL DESCRIPTION
Output power for 1 dB compression (P1dB): 16.5 dBm typical
Saturated output power (PSAT): 19 dBm typical
Gain: 14.5 dB typical
Noise figure: 1.5 dB
Output third order intercept (IP3): 26 dBm typical
Supply voltage: 7.5 V at 60 mA
The HMC8401 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC). The HMC8401 is a wideband low
noise amplifier which operates between dc and 28 GHz. The
amplifier provides 14.5 dB of gain, 1.5 dB noise figure, 26 dBm
output IP3 and 16.5 dBm of output power at 1 dB gain compression
while requiring 60 mA from a 7.5 V supply. The HMC8401 also
has a gain control option, VGG2. The HMC8401 amplifier input/
outputs are internally matched to 50 Ω facilitating integration
into multichip modules (MCMs). All data is taken with the chip
connected via two 0.025 mm (1 mil) wire bonds of minimal
length 0.31 mm (12 mils).
50 Ω matched input/output
Die size: 2.55 mm x 1.62 mm x 0.05 mm
APPLICATIONS
Test instrumentation
Microwave radios and very small aperture terminals (VSATs)
Military and space
Telecommunications infrastructure
Fiber optics
FUNCTIONAL BLOCK DIAGRAM
3
4
HMC8401
5
RFOUT
V
2
GG
2
1
RFIN
8
7
6
Figure 1.
Rev. B
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