Datasheet > HMC8410-Die

HMC8410-Die

更新时间： 2024-11-06 14:57:43

品牌	Logo	应用领域
亚德诺 - ADI		放大器
页数	文件大小	规格书
17页	417K
描述
0.01 GHz至10 GHz，GaAs、pHEMT、MMIC、低噪声放大器

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HMC8410-Die 数据手册

0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC,

Low Noise Amplifier

Data Sheet

HMC8410CHIPS

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Low noise figure: 1.1 dB typical

High gain: 19.5 dB typical

High output third order intercept (IP3): 33 dBm typical

Die size: 0.945 mm × 0.61 × 0.102 mm

RFOUT/V

RFIN/V

HMC8410CHIPS

APPLICATIONS

Figure 1.

Software defined radios

Electronic warfare

Radar applications

GENERAL DESCRIPTION

The HMC8410CHIPS is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high

electron mobility transistor (pHEMT), low noise, wideband

amplifier that operates over a 0.01 GHz to 10 GHz frequency

range. The HMC8410CHIPS provides a typical gain of 19.5 dB,

a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm,

requiring only 65 mA from a 5 V supply voltage. The saturated

output power (P_SAT) of 22.5 dBm enables the low noise amplifier

(LNA) to function as a local oscillator (LO) driver for many of

Analog Devices, Inc., balanced, I/Q or image rejection mixers.

The HMC8410CHIPS also features inputs/outputs internally

matched to 50 Ω, making the device ideal for surface mounted

technology (SMT)-based, high capacity microwave radio

applications.

Rev. C

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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice.

No license is granted by implication or otherwise under any patent or patent rights of Analog

Devices. Trademarks and registeredtrademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Technical Support

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