0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC,
Low Noise Amplifier
Data Sheet
HMC8410
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Low noise figure: 1.1 dB typical
High gain: 19.5 dB typical
HMC8410
High output third-order intercept (IP3): 33 dBm typical
6-lead, 2 mm × 2 mm LFCSP package
RFIN/V
1
RFOUT/V
DD
GG
APPLICATIONS
Software defined radios
Electronics warfare
Radar applications
Figure 1.
GENERAL DESCRIPTION
The HMC8410 also features inputs/outputs (I/Os) that are
internally matched to 50 Ω, making it ideal for surface-mounted
technology (SMT)-based, high capacity microwave radio
applications.
The HMC8410 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise wideband
amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410
provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure,
and a typical output IP3 of 33 dBm, requiring only 65 mA from
a 5 V supply voltage. The saturated output power (PSAT) of up to
22.5 dBm enables the low noise amplifier (LNA) to function as a
local oscillator (LO) driver for many of Analog Devices, Inc.,
balanced, I/Q or image rejection mixers.
The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm,
LFCSP package.
Multifunction pin names may be referenced by their relevant
function only.
Rev. A
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