Datasheet > HMC8415LP6GE

HMC8415LP6GE

更新时间： 2024-01-30 08:28:33

品牌	Logo	应用领域
亚德诺 - ADI		高功率电源射频微波
页数	文件大小	规格书
23页	454K
描述
40 W (46 dBm), 9 GHz to 10.5 GHz, GaN Power Amplifier

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技术参数
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HMC8415LP6GE 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	针数：	40
Reach Compliance Code：	compliant	风险等级：	5.63
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	25.5 dB	最大输入功率 (CW)：	30 dBm
JESD-609代码：	e3	最大工作频率：	10500 MHz
最小工作频率：	9000 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND HIGH POWER
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

HMC8415LP6GE 数据手册

40 W (46 dBm), 9 GHz to 10.5 GHz,

GaN Power Amplifier

Data Sheet

HMC8415LP6GE

FEATURES

FUNCTIONAL BLOCK DIAGRAM

High output power: 46 dBm typical at P_IN= 23 dBm

High small signal gain: 32.5 dB typical

High power gain: 23 dB typical at P_IN= 23 dBm

Frequency range: 9 GHz to 10.5 GHz

High power added efficiency: 40% typical at P_IN= 23 dBm

Supply voltage: V_DDxA/V_DDxB= 28 V at 1000 mA

6 mm × 6 mm, 40-lead LFSCP

HMC8415LP6GE

GND

RFIN

GND

RFOUT

GND

APPLICATIONS

Weather radars

Marine radars

Military radars

PACKAGE

BASE

GND

Figure 1.

GENERAL DESCRIPTION

The HMC8415LP6GE is a gallium nitride (GaN), power amplifier,

delivering 40 W (46 dBm) with more than 37.5% power added

efficiency (PAE) across a bandwidth of 9 GHz to 10.5 GHz.

The HMC8415LP6GE is ideal for pulsed applications, such as

wireless weather, marine, and military radar applications.

Rev. 0

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Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rightsof third parties that may result fromits use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks andregisteredtrademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

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