Low Noise Amplifier,
0.4 GHz to 11 GHz
HMC8412
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
HMC8412
Low noise figure: 1.4 dB typical
Single positive supply (self biased)
High gain: ≤15.5 dB typical
6
1
2
3
V
DD
R
BIAS
GND
RF
5 GND
High OIP3: ≤33 dBm typical
4
RF
IN
OUT
RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP
Figure 1.
APPLICATIONS
Test instrumentation
Telecommunications
Military radar and communication
Electronic warfare
Aerospace
GENERAL DESCRIPTION
The HMC8412 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise wideband
amplifier that operates from 0.4 GHz to 11 GHz.
(LO) driver for many Analog Devices, Inc., balanced, inphase
and quadrature (I/Q) or image rejection mixers.
The HMC8412 also features inputs and outputs that are
internally matched to 50 Ω, making the device ideal for surface-
mount technology (SMT)-based, high capacity microwave radio
applications.
The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical
noise figure, and a typical output third-order intercept (OIP3) of
≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage.
The saturated output power (PSAT) of ≤20.5 dBm typical enables
the low noise amplifier (LNA) to function as a local oscillator
The HMC8412 is housed in an RoHS-compliant, 2 mm ×
2 mm, 6-lead LFCSP.
Rev. 0
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