Datasheet > HMC8402-SX

HMC8402-SX

更新时间： 2024-01-07 12:46:56

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
15页	361K
描述
Low Noise Amplifier

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技术参数
数据手册

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HMC8402-SX 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	针数：	0
Reach Compliance Code：	compliant	风险等级：	2.23
Is Samacsys：	N	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	11 dB
最大输入功率 (CW)：	20 dBm	最大工作频率：	30000 MHz
最小工作频率：	2000 MHz	最高工作温度：	85 °C
最低工作温度：	-55 °C	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

HMC8402-SX 数据手册

2 GHz to 30 GHz, GaAs, pHEMT, MMIC,

Low Noise Amplifier

Data Sheet

HMC8402

FEATURES

GENERAL DESCRIPTION

Output power for 1 dB compression (P1dB): 21.5 dBm typical

Saturated output power (P_SAT): 22 dBm typical

Gain: 13.5 dB typical

Noise figure: 2 dB

Output third order intercept (IP3): 26 dBm typical

Supply voltage: 7 V at 68 mA

The HMC8402 is a gallium arsenide (GaAs), pseudomorphic

high electron mobility transistor (pHEMT), monolithic microwave

integrated circuit (MMIC), low noise amplifier which operates

between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of

gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of

output power at 1 dB gain compression while requiring 68 mA

from a 7 V supply. The HMC8402 is self biased with only a single

positive supply needed to achieve a drain current I_DQof 68 mA.

50 Ω matched input/output

Die size: 2.7 mm × 1.35 mm × 0.05 mm

The HMC8402 amplifier input/outputs are internally matched to

50 Ω facilitating integration into multichip modules (MCMs). All

data is taken with the chip connected via two 0.025 mm (1 mil)

wire bonds of minimal length 0.31 mm (12 mils).

APPLICATIONS

Test instrumentation

Microwave radios and very small aperture terminals (VSATs)

Military and space

Telecommunications infrastructure

Fiber optics

FUNCTIONAL BLOCK DIAGRAM

HMC8402

RFOUT

RFIN

Figure 1.

Rev. C

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