Datasheet > HMC8410CHIPS-SX

HMC8410CHIPS-SX

更新时间： 2024-11-06 01:16:47

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
16页	399K
描述
Low noise figure: 1.1 dB typical

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替代型号

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HMC8410CHIPS-SX 数据手册

0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC,

Low Noise Amplifier

Data Sheet

HMC8410CHIPS

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Low noise figure: 1.1 dB typical

High gain: 19.5 dB typical

RFOUT/V

High output third-order intercept (IP3): 33 dBm typical

Die size: 0.95 mm × 0.61 × 0.102 mm

RFIN/V

HMC8410CHIPS

APPLICATIONS

Figure 1.

Software defined radios

Electronics warfare

Radar applications

GENERAL DESCRIPTION

The HMC8410CHIPS is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high

electron mobility transistor (pHEMT), low noise wideband ampli-

fier that operates from 0.01 GHz to 10 GHz. The HMC8410CHIPS

provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure,

and a typical output IP3 of 33 dBm, requiring only 65 mA from

a 5 V supply voltage. The saturated output power (P_SAT) of

22.5 dBm enables the low noise amplifier (LNA) to function as a

local oscillator (LO) driver for many of Analog Devices, Inc.,

balanced, I/Q or image rejection mixers.

The HMC8410CHIPS also features inputs/outputs (I/Os) that are

internally matched to 50 Ω, making it ideal for surface-mounted

technology (SMT)-based, high capacity microwave radio

applications.

Rev. 0

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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

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HMC8410CHIPS-SX 替代型号

型号	品牌	替代类型	描述	数据表
HMC8410CHIPS	ADI	完全替代	0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier

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