Datasheet > HMC8401-Die

HMC8401-Die

更新时间： 2024-11-20 14:58:11

品牌	Logo	应用领域
亚德诺 - ADI		放大器
页数	文件大小	规格书
17页	354K
描述
DC至28 GHz，GaAs pHEMT MMIC低噪声放大器

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HMC8401-Die 数据手册

DC to 28 GHz, GaAs, pHEMT,

MMIC, Low Noise Amplifier

Data Sheet

HMC8401

FEATURES

GENERAL DESCRIPTION

Output power for 1 dB compression (P1dB): 16.5 dBm typical

Saturated output power (P_SAT): 19 dBm typical

Gain: 14.5 dB typical

Noise figure: 1.5 dB

Output third order intercept (IP3): 26 dBm typical

Supply voltage: 7.5 V at 60 mA

The HMC8401 is a gallium arsenide (GaAs), pseudomorphic

high electron mobility transistor (pHEMT), monolithic microwave

integrated circuit (MMIC). The HMC8401 is a wideband low

noise amplifier which operates between dc and 28 GHz. The

amplifier provides 14.5 dB of gain, 1.5 dB noise figure, 26 dBm

output IP3 and 16.5 dBm of output power at 1 dB gain compression

while requiring 60 mA from a 7.5 V supply. The HMC8401 also

has a gain control option, V_GG2. The HMC8401 amplifier input/

outputs are internally matched to 50 Ω facilitating integration

into multichip modules (MCMs). All data is taken with the chip

connected via two 0.025 mm (1 mil) wire bonds of minimal

length 0.31 mm (12 mils).

50 Ω matched input/output

Die size: 2.55 mm x 1.62 mm x 0.05 mm

APPLICATIONS

Test instrumentation

Microwave radios and very small aperture terminals (VSATs)

Military and space

Telecommunications infrastructure

Fiber optics

FUNCTIONAL BLOCK DIAGRAM

HMC8401

RFOUT

RFIN

Figure 1.

Rev. B

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