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HMC5805A PDF预览

HMC5805A

更新时间: 2022-02-26 11:55:53
品牌 Logo 应用领域
亚德诺 - ADI /
页数 文件大小 规格书
10页 775K
描述
High P1dB Output Power: 24.5 dBm

HMC5805A 数据手册

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HMC5805ALS6  
v01.1216  
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER  
DC - 40 GHz  
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
Low frequency termination. Attach bypass  
capacitor per application circuit herein.  
ACG2  
ACG1  
Low frequency termination. Attach bypass  
capacitor per application circuit herein.  
1, 2, 14  
RF output for amplifier. Connect DC bias (VDD) network  
to provide drain current (Idd). See application circuit  
herein.  
RFOUT & VDD  
VGG2  
Gate control 2 for amplifier. Attach bypass  
capacitors per application circuit herein. For normal  
operation +3.5V should be applied to Vgg2.  
3
6
9
This pin is DC coupled and matched  
to 50 Ohms. Blocking capacitor is required.  
RFIN  
Gate control 1 for amplifier. Attach bypass  
capacitors per application circuit herein. Please  
follow “MMIC Amplifier Biasing Procedure”  
application note.  
VGG1  
Low frequency termination. Attach bypass  
capacitor per application circuit herein.  
10  
11  
ACG4  
ACG3  
Low frequency termination. Attach bypass  
capacitor per application circuit herein.  
These pins and exposed ground paddle must be  
connected to RF/DC ground.  
5, 7, 13, 15  
4, 8, 12, 16  
GND  
N/C  
These pins are not connected internally; however, all data  
shown herein was measured with these pins connected to  
RF/DC ground externally.  
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
7
Application Support: Phone: 1-800-ANALOG-D  

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