HMC-APH462
v03.0209
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 15 - 27 GHz
Typical Applications
Features
Output IP3: +37 dBm
P1dB: +29 dBm
This HMC-APH462 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
Gain: 17 dB
3
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.70 x 2.62 x 0.1 mm
• Military & Space
General Description
Functional Diagram
The HMC-APH462 is a high dynamic range, two stage
GaAs HEMT MMIC 0.8 Watt Power Amplifier which
operates between 15 and 27 GHz. The HMC-APH462
provides 17 dB of gain, and an output power of +29
dBm at 1 dB compression from a +5V supply voltage.
All bond pads and the die backside are Ti/Au metallized
and the amplifier device is fully passivated for reliable
operation. The HMC-APH462 GaAs HEMT MMIC 1
Watt Power Amplifier is compatible with conventional
die attach methods, as well as thermocompression
and thermosonic wire bonding, making it ideal for
MCM and hybrid microcircuit applications. All data
Shown herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes.
Electrical Specifications[1]
TA = +25° C, Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 1440 mA
[2]
Parameter
Min.
Typ.
15 - 17
16
Max.
Min.
Typ.
17 - 27
17
Max.
Units
GHz
dB
Frequency Range
Gain
12
13
Input Return Loss
Output Return Loss
15
18
dB
15
18
dB
Output power for 1dB Compression (P1dB)
Output Third Order Intercept (IP3)
26
27
29
dBm
34
37
Supply Current (Idd1+Idd2 + Idd3 + Idd4)
1440
1440
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2=Vgg3=Vgg4 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 + Idd4 = 480 mA, Idd2 + Idd3 = 960 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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