5秒后页面跳转
HMC-APH633 PDF预览

HMC-APH633

更新时间: 2024-01-25 10:44:09
品牌 Logo 应用领域
HITTITE 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
6页 183K
描述
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz

HMC-APH633 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:TransferredReach Compliance Code:compliant
ECCN代码:3A001.B.2.F风险等级:5.71
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:9 dB
最大输入功率 (CW):14 dBmJESD-609代码:e4
最大工作频率:76000 MHz最小工作频率:71000 MHz
最高工作温度:85 °C最低工作温度:-55 °C
射频/微波设备类型:WIDE BAND MEDIUM POWER端子面层:Gold (Au)
Base Number Matches:1

HMC-APH633 数据手册

 浏览型号HMC-APH633的Datasheet PDF文件第2页浏览型号HMC-APH633的Datasheet PDF文件第3页浏览型号HMC-APH633的Datasheet PDF文件第4页浏览型号HMC-APH633的Datasheet PDF文件第5页浏览型号HMC-APH633的Datasheet PDF文件第6页 
HMC-APH633  
v03.0209  
GaAs HEMT MMIC MEDIUM POWER  
AMPLIFIER, 71 - 76 GHz  
Typical Applications  
Features  
Gain: 13 dB  
This HMC-APH633 is ideal for:  
• Short Haul / High Capacity Links  
• Wireless LAN Bridges  
P1dB: +20 dBm  
Supply Voltage: +4V  
50 Ohm Matched Input/Output  
Die Size: 2.47 x 1.60 x 0.05 mm  
3
• Military & Space  
• E-Band Communication Systems  
General Description  
Functional Diagram  
The HMC-APH633 is a two stage GaAs HEMT MMIC  
Medium Power Amplifier which operates between  
71 and 76 GHz. The HMC-APH633 provides 13 dB  
of gain, and an output power of +20 dBm at 1 dB  
compression from a +4V supply voltage. All bond  
pads and the die backside are Ti/Au metallized  
and the amplifier device is fully passivated for reliable  
operation. The HMC-APH633 GaAs HEMT MMIC  
Medium Power Amplifier is compatible with conven-  
tional die attach methods, as well as thermocomp-  
ression and thermosonic wire bonding, making it  
ideal for MCM and hybrid microcircuit applications.  
All data shown herein is measured with the chip in  
a 50 Ohm environment and contacted with RF  
probes.  
[2]  
Electrical Specifications, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240 mA  
Parameter  
Min.  
Typ.  
71-76  
13  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
9
Input Return Loss  
Output Return Loss  
8
dB  
10  
dB  
Output power for 1dB Compression (P1dB)  
Supply Current (Idd1+Idd2)  
20  
dBm  
mA  
240  
[1] Unless otherwise indicated, all measurements are from probed die.  
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.1V) to achieve Iddtotal = 240 mA  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
3 - 220  

与HMC-APH633相关器件

型号 品牌 获取价格 描述 数据表
HMC-APH633-Die ADI

获取价格

中等功率放大器芯片,71 - 76 GHz
HMC-APH634 HITTITE

获取价格

GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz
HMC-APH634_1007 HITTITE

获取价格

GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz
HMC-APH634-Die ADI

获取价格

中等功率放大器芯片,81 - 86 GHz
HMC-AUH232 HITTITE

获取价格

GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz
HMC-AUH232_09 HITTITE

获取价格

GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz
HMC-AUH232-Die ADI

获取价格

调制器驱动放大器芯片,DC - 43 GHz
HMC-AUH249 HITTITE

获取价格

GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz
HMC-AUH249_10 HITTITE

获取价格

GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz
HMC-AUH249-Die ADI

获取价格

调制器驱动放大器芯片,DC - 35 GHz