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HMC-APH634 PDF预览

HMC-APH634

更新时间: 2024-01-04 11:52:39
品牌 Logo 应用领域
HITTITE 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
6页 181K
描述
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz

HMC-APH634 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:compliantECCN代码:3A001.B.2.F
风险等级:5.71Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
增益:7 dB最大输入功率 (CW):13 dBm
JESD-609代码:e4最大工作频率:86000 MHz
最小工作频率:81000 MHz最高工作温度:85 °C
最低工作温度:-55 °C射频/微波设备类型:WIDE BAND MEDIUM POWER
端子面层:Gold (Au)Base Number Matches:1

HMC-APH634 数据手册

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HMC-APH634  
v00.0110  
GaAs HEMT MMIC MEDIUM POWER  
AMPLIFIER, 81 - 86 GHz  
Typical Applications  
Features  
High Gain: 12 dB  
This HMC-APH634 is ideal for:  
• Short Haul / High Capacity Links  
• Wireless LAN Bridges  
High P1dB: +19 dBm  
Bias Supply: +4V  
3
50 Ohm Matched Input/Output  
Die Size: 2.57 x 1.70 x 0.05 mm  
• Military & Space  
• E-Band Communication Systems  
General Description  
Functional Diagram  
The HMC-APH634 is a two stage GaAs HEMT MMIC  
Medium Power Amplifier which operates between  
81 and 86 GHz. The HMC-APH634 provides 12  
dB of gain, and an output power of up to +20 dBm  
at 1 dB compression from a +4V supply. All bond  
pads and the die backside are Ti/Au metallized  
and the amplifier device is fully passivated for reliable  
operation. The HMC-APH634 GaAs HEMT MMIC  
Medium Power Amplifier is compatible with conven-  
tional die attach methods, as well as thermocomp-  
ression and thermosonic wire bonding, making it  
ideal for MCM and hybrid microcircuit applications.  
All data shown herein is measured with the chip in  
a 50 Ohm environment and contacted with RF probes.  
[2]  
Electrical Specifications, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240mA  
Parameter  
Min.  
Typ.  
81 - 86  
12  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
7
Input Return Loss  
Output Return Loss  
7
dB  
8
dB  
Output power for 1dB Compression (P1dB)  
Supply Current (Idd1+Idd2)  
19  
dBm  
mA  
240  
[1] Unless otherwise indicated, all measurements are from probed die.  
[2] Adjust Vgg1=Vgg2 between -0.8V to +0.3V (typ. -0.1V) to achieve Iddtotal = 240mA  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
3 - 250  

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