HMC-APH518

更新时间： 2024-01-15 04:03:08

品牌	Logo	应用领域
HITTITE		射频微波功率放大器
页数	文件大小	规格书
6页	201K
描述
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 21 - 24 GHz

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HMC-APH518 数据手册

HMC-APH518

v02.0208

GaAs HEMT MMIC 1 WATT POWER

AMPLIFIER, 21 - 24 GHz

Typical Applications

Features

Output IP3: +39 dBm

P1dB: +30.5 dBm

This HMC-APH518 is ideal for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• VSAT

Gain: 17 dB

Supply Voltage: +5V

50 Ohm Matched Input/Output

Die Size: 4.49 x 1.31 x 0.1 mm

• Military & Space

General Description

Functional Diagram

The HMC-APH518 is a two stage GaAs HEMT MMIC

1 Watt Power Ampliﬁer which operates between

21 and 24 GHz. The HMC-APH518 provides 17 dB

of gain, and an output power of +30.5 dBm at 1 dB

compression from a +5V supply voltage. All bond

pads and the die backside are Ti/Au metallized and

the ampliﬁer device is fully passivated for reliable

operation. The HMC-APH518 GaAs HEMT MMIC 1

Watt Power Ampliﬁer is compatible with conventional

die attach methods, as well as thermocompression

and thermosonic wire bonding, making it ideal for

MCM and hybrid microcircuit applications. All data

Shown herein is measured with the chip in a 50 Ohm

environment and contacted with RF probes.

[1]

[2]

Electrical Speciﬁcations , T_A= +25° C, Vdd1=Vdd2= 5V, Idd1+Idd2= 950 mA

Parameter

Min.

Typ.

21 - 24

Max.

Units

GHz

Frequency Range

Gain

Input Return Loss

Output Return Loss

dBm

Output power for 1dB Compression (P1dB)

Output Third Order Intercept (IP3)

30.5

Supply Current (Idd1+Idd2)

950

[1] Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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