Datasheet > HMC-AUH317

HMC-AUH317

更新时间： 2024-01-17 20:48:55

品牌	Logo	应用领域
HITTITE		放大器射频微波功率放大器
页数	文件大小	规格书
6页	197K
描述
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz

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HMC-AUH317 数据手册

HMC-APH510

v03.0709

GaAs HEMT MMIC MEDIUM POWER

AMPLIFIER, 37 - 40 GHz

Typical Applications

Features

Output IP3: +35 dBm

P1dB: +26 dBm

This HMC-APH510 is ideal for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Military & Space

Gain: 20 dB

Supply Voltage: +5V

50 Ohm Matched Input/Output

Die Size: 3.76 x 0.92 x 0.1 mm

General Description

Functional Diagram

The HMC-APH510 is a high dynamic range, three

stage GaAs HEMT MMIC Medium Power Ampliﬁer

which operates between 37 and 40 GHz. The HMC-

APH510 provides 20 dB of gain, and an output power

of +26 dBm at 1 dB compression from a +5V supply

voltage. All bond pads and the die backside are Ti/Au

metallized and the ampliﬁer device is fully passivated

for reliable operation. The HMC-APH510 GaAs

HEMT MMIC Medium Power Ampliﬁer is compatible

with conventional die attach methods, as well as

thermocompression and thermosonic wire bonding,

making it ideal for MCM and hybrid microcircuit

applications. All data shown herein is measured with

the chip in a 50 Ohm environment and contacted with

RF probes.

Electrical Speciﬁcations, T_A= +25° C,

Vdd1 = Vdd2 = Vdd3 = 5V, Idd1 + Idd2 + Idd3 = 640 mA

[2]

Parameter

Min.

Typ.

37 - 40

Max.

Units

GHz

Frequency Range

Gain

Input Return Loss

Output Return Loss

Output power for 1dB Compression (P1dB)

Output Third Order Intercept (IP3)

dBm

Supply Current (Idd1+Idd2+Idd3)

640

[1] Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ. -0.5V) to achieve Idd_total= 640 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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