Datasheet > HMC-AUH320

HMC-AUH320

更新时间： 2024-01-01 14:18:17

品牌	Logo	应用领域
HITTITE		放大器射频微波功率放大器
页数	文件大小	规格书
6页	201K
描述
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HMC-AUH320 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	Reach Compliance Code：	compliant
ECCN代码：	3A001.B.2.F	风险等级：	5.7
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	10 dB	最大工作频率：	86000 MHz
最小工作频率：	71000 MHz	最高工作温度：	85 °C
最低工作温度：	-55 °C	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

HMC-AUH320 数据手册

HMC-AUH320

v03.0209

GaAs HEMT MMIC MEDIUM POWER

AMPLIFIER, 71 - 86 GHz

Typical Applications

Features

Gain: 16 dB @ 74 GHz

P1dB: +15 dBm

This HMC-AUH320 is ideal for:

• Short Haul / High Capacity Links

• Wireless LAN Bridges

Supply Voltage: +4V

50 Ohm Matched Input/Output

Die Size: 2.20 x 0.87 x 0.1 mm

• Automotive Radar

• Military & Space

• E-Band Communication Systems

General Description

Functional Diagram

The HMC-AUH320 is a high dynamic range, four stage

GaAs HEMT MMIC Medium Power Ampliﬁer which

operates between 71 and 86 GHz. The HMC-AUH320

provides 16 dB of gain at 74 GHz, and an output

power of +15 dBm at 1 dB compression from a +4V

supply voltage. All bond pads and the die backside

are Ti/Au metallized and the ampliﬁer device is fully

passivated for reliable operation. The HMC-AUH320

GaAs HEMT MMIC Medium Power Ampliﬁer is

compatible with conventional die attach methods,

as well as thermocompression and thermosonic

wire bonding, making it ideal for MCM and hybrid

microcircuit applications. All data shown herein is

measured with the chip in a 50 Ohm environment and

contacted with RF probes.

[2]

Electrical Speciﬁcations, T_A= +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 130 mA

Parameter

Min.

Typ.

71 - 86

Max.

Units

GHz

Frequency Range

Gain

Input Return Loss

Output Return Loss

Output power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

dBm

Supply Current (Idd1+Idd2)

130

[1] Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg between -0.8V to +0.3V (typ -0.1V) to achieve Idd₁= 40 mA, Idd₂= 90 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

3 - 238

12 3 4 5 6

中文翻译

下载PDF

与HMC-AUH320相关器件

型号	品牌	获取价格	描述	数据表
HMC-AUH320-Die	ADI	获取价格	中等功率放大器芯片，71 - 86 GHz
HMC-C001	HITTITE	获取价格	WIDEBAND LNA MODULE, 2 - 20 GHz
HMC-C001	ADI	获取价格	宽带低噪声放大器模块，2 - 20 GHz
HMC-C001_07	HITTITE	获取价格	WIDEBAND LNA MODULE, 2 - 20 GHz
HMC-C002	HITTITE	获取价格	WIDEBAND LNA MODULE, 2 - 20 GHz
HMC-C002	ADI	获取价格	宽带低噪声放大器模块，2 - 20 GHz
HMC-C003	HITTITE	获取价格	WIDEBAND POWER AMPLIFIER MODULE, 2 - 20 GHz
HMC-C004	HITTITE	获取价格	WIDEBAND DRIVER AMPLIFIER MODULE, 10 MHz - 20 GHz
HMC-C004	ADI	获取价格	宽带驱动放大器模块，0.01 - 20 GHz
HMC-C005	HITTITE	获取价格	DIVIDE-BY-2 PRESCALER MODULE, 0.5 - 18 GHz