HMC-APH608
v03.0409
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Typical Applications
Features
Output IP3: +40 dBm
P1dB: +30 dBm
This HMC-APH608 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
Gain: 17 dB
3
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 4.49 x 1.31 x 0.1 mm
• Military & Space
General Description
Functional Diagram
The HMC-APH608 is a high dynamic range, two stage
GaAs HEMT MMIC 1 Watt Power Amplifier which
operates between 22.5 and 26.5 GHz. The HMC-
APH608 provides 17 dB of gain, and an output power
of +30 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-APH608 GaAs
HEMT MMIC 1 Watt Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data Shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
[1]
[2]
Electrical Specifications , TA = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 950 mA
Parameter
Min.
Typ.
Max.
Min.
Typ.
24 - 26.5
17
Max.
Units
GHz
dB
Frequency Range
Gain
22.5 - 26.5
14.5
17
8
16
Input Return Loss
Output Return Loss
11
dB
9
12
dB
Output power for 1dB Compression (P1dB)
Output Third Order Intercept (IP3)
Supply Current (Idd1+Idd2)
27
36
30
39
950
28
37
30
dBm
dBm
mA
40
950
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA
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