Datasheet > HMC-APH596

HMC-APH596

更新时间： 2024-02-21 03:29:36

品牌	Logo	应用领域
HITTITE		放大器功率放大器
页数	文件大小	规格书
6页	208K
描述
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz

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HMC-APH596 数据手册

HMC-APH596

v02.0208

GaAs HEMT MMIC MEDIUM POWER

AMPLIFIER, 16 - 33 GHz

Typical Applications

Features

Output IP3: +33 dBm

P1dB: +24 dBm

This HMC-APH596 is ideal for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• VSAT

Gain: 17 dB

Supply Voltage: +5V

50 Ohm Matched Input/Output

Die Size: 2.55 x 1.87 x 0.1 mm

• Military & Space

General Description

Functional Diagram

The HMC-APH596 is a two stage GaAs HEMT

MMIC Medium Power Ampliﬁer which operates

between 16 and 33 GHz. The HMC-APH596 provides

17 dB of gain, and an output power of +24 dBm at

1 dB compression from a +5V supply voltage. All

bond pads and the die backside are Ti/Au metallized

and the ampliﬁer device is fully passivated for reliable

operation. The HMC-APH596 GaAs HEMT MMIC

Medium Power Ampliﬁer is compatible with conven-

tional die attach methods, as well as thermocomp-

ression and thermosonic wirebonding, making it ideal

for MCM and hybrid microcircuit applications. All

data Shown herein is measured with the chip in a 50

Ohm environment and contacted with RF probes.

[2]

Electrical Speciﬁcations, T_A= +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 400 mA

Parameter

Min.

Typ.

16 - 33

Max.

Units

GHz

Frequency Range

Gain

Input Return Loss

Output Return Loss

Output power for 1dB Compression (P1dB)

Output Third Order Intercept (IP3)

dBm

Supply Current (Idd1+Idd2)

400

[1] Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd_total= 400 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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