HMC-APH510
v03.0709
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 37 - 40 GHz
Typical Applications
Features
Output IP3: +35 dBm
P1dB: +26 dBm
This HMC-APH510 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
Gain: 20 dB
3
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.76 x 0.92 x 0.1 mm
General Description
Functional Diagram
The HMC-APH510 is a high dynamic range, three
stage GaAs HEMT MMIC Medium Power Amplifier
which operates between 37 and 40 GHz. The HMC-
APH510 provides 20 dB of gain, and an output power
of +26 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-APH510 GaAs
HEMT MMIC Medium Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifications, TA = +25° C,
Vdd1 = Vdd2 = Vdd3 = 5V, Idd1 + Idd2 + Idd3 = 640 mA
[2]
Parameter
Min.
Typ.
37 - 40
20
Max.
Units
GHz
dB
Frequency Range
Gain
18
Input Return Loss
Output Return Loss
16
dB
7
dB
Output power for 1dB Compression (P1dB)
Output Third Order Intercept (IP3)
25
33
26
dBm
dBm
mA
35
Supply Current (Idd1+Idd2+Idd3)
640
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ. -0.5V) to achieve Iddtotal = 640 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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