HGTD8P50G1,
HGTD8P50G1S
8A, 500V P-Channel IGBTs
March 1997
Features
• 8A, 500V
Package
JEDEC TO-251AA
EMITTER
COLLECTOR
GATE
• 3.7V VCE(SAT)
• Typical Fall Time - 1800ns
• High Input Impedance
• TJ = +150oC
(FLANGE)
COLLECTOR
Description
JEDEC TO-252AA
The HGTD8P50G1 and the HGTD8P50G1S are P-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high voltage, low on-dissipation applications such
as switching regulators and motor drives. This P- channel IGBT
can be paired with N-Channel IGBTs to form a complementary
power switch and it is ideal for half bridge circuit configurations.
These types can be operated directly from low power integrated
circuits.
(FLANGE)
COLLECTOR
GATE
EMITTER
PACKAGING AVAILABILITY
Symbol
PART NUMBER
HGTD8P50G1
PACKAGE
TO-251AA
TO-252AA
BRAND
G8P50G
G8P50G
C
HGTD8P50G1S
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
HGTD8P50G1S9A.
G
E
The development type number for these devices is TA49015.
o
Absolute Maximum Ratings
T
= +25 C, Unless Otherwise Specified
C
HGTD8P50G1/G1S
UNITS
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Emitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
-500
10
V
V
CES
ECS
Collector Current Continuous
o
At T = +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
-12
-8
A
A
C
C25
C90
o
At T = +90 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
-18
±20
±30
A
V
V
CM
GES
GEM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
Switching SOA at T = +25 C, V = -350V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
C
CL
No Snubber, Figure 17 - Circuit 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With 0.1µF Capacitor, Figure 17 - Circuit 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-3
-18
A
A
o
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
66
0.53
W
C
D
o
o
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W/ C
C
o
Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . .T , T
-40 to +150
+260
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
(0.125" from case for 5s)
C
L
NOTE:
o
1. T = 25 C, V = 350V, R = 25Ω, Figure 17 - Circuit 2 (C = 0.1µF)
J
CL
GE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 3649.3
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