Datasheet > HGTG12N60A4D

HGTG12N60A4D

更新时间： 2024-09-11 11:11:43

品牌	Logo	应用领域
安森美 - ONSEMI		局域网栅瞄准线双极性晶体管功率控制
页数	文件大小	规格书
12页	583K
描述
600V，SMPS IGBT

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中文翻译

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数据手册
替代型号

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HGTG12N60A4D 数据手册

SMPS Series N-Channel

IGBT with Anti-Parallel

Hyperfast Diode

600 V

HGTG12N60A4D,

HGTP12N60A4D,

HGT1S12N60A4DS

www.onsemi.com

The

HGTG12N60A4D,

HGTP12N60A4D

and

HGT1S12N60A4DS are MOS gated high voltage switching devices

combining the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the

low on−state conduction loss of a bipolar transistor. The much lower

on−state voltage drop varies only moderately between 25°C and

150°C. The IGBT used is the development type TA49335. The diode

used in anti−parallel is the development type TA49371.

This IGBT is ideal for many high voltage switching applications

operating at high frequencies where low conduction losses are

essential. This device has been optimized for high frequency switch

mode power supplies.

COLLECTOR

(FLANGE)

TO−220−3LD

CASE 340AT

JEDEC ALTERNATE

VERSION

Formerly Developmental Type TA49337.

COLLECTOR

(FLANGE)

D PAK−3

Features

(TO−263, 3−LEAD)

CASE 418AJ

JEDEC STYLE

• >100 kHz Operation 390 V, 12 A

• 200 kHz Operation 390 V, 9A

• 600 V Switching SOA Capability

• Typical Fall Time 70 ns at T = 125°C

TO−247−3LD

SHORT LEAD

CASE 340CK

JEDEC STYLE

• Low Conduction Loss

• Temperature Compensating Saber™ Model

COLLECTOR

(FLANGE)

• Related Literature

♦ TB334 “Guidelines for Soldering Surface Mount Components to

PC Boards”

MARKING DIAGRAM

• These are Pb−Free Devices

$Y&Z&3&K

12N60A4D

$Y&Z&3&K

12N60A4D

$Y&Z&3&K

12N60A4D

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

12N60A4D = Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 8 of

this data sheet.

Publication Order Number:

April, 2020 − Rev. 3

HGT1S12N60A4DS/D

12 3 4 5 6 7...12

中文翻译

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HGTG12N60A4D 替代型号

型号	品牌	替代类型	描述	数据表
HGTG11N120CND	ONSEMI	类似代替	1200 V NPT IGBT
HGTG20N60A4D	ONSEMI	类似代替	600V，SMPS IGBT
HGTG12N60A4D	FAIRCHILD	类似代替	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

与HGTG12N60A4D相关器件

型号	品牌	获取价格	描述	数据表
HGTG12N60A4D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG12N60A4D_NL	ROCHESTER	获取价格	54A, 600V, N-CHANNEL IGBT, TO-247
HGTG12N60A4S	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 54A I(C) \| TO-247AA
HGTG12N60B3	FAIRCHILD	获取价格	27A, 600V, UFS Series N-Channel IGBTs
HGTG12N60B3D	INTERSIL	获取价格	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTG12N60B3D	FAIRCHILD	获取价格	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTG12N60C3D	FAIRCHILD	获取价格	24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
HGTG12N60C3D	HARRIS	获取价格	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG12N60C3D	INTERSIL	获取价格	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG12N60C3D	ONSEMI	获取价格	24A，600V，UFS 串联 N 沟道 IGBT，带防并联 Hyperfast 二极管

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