Datasheet > HGQ014N04B-G

HGQ014N04B-G

更新时间： 2024-11-13 15:18:11

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	725K
描述
PDFN5×6

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数据手册

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HGQ014N04B-G 数据手册

Silicon N-Channel Power MOSFET

HGQ014N04B-G

○

General Description：

V_DSS

200

100

I_D(_{Silicon Limited)}

I_D(_{Package Limited)}

HGQ014N04B-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is PDFN5×6-8L, which accords with the RoHS

standard.

R_DS(ON)Typ

1.1

mΩ

Features：

 Fast Switching

 Low ON Resistance

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：



Power switch circuit of adaptor and charger.

Synchronus Rectification in DC/DC and AC/DC Converters

Absolute（TJ= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

200

100

400

±18

780

Continuous Drain Current Tc= 25°C (

Silicon Limited)

I_D

Package Limited)

Continuous Drain Current Tc = 100 °C (

Pulsed Drain Current Tc= 25°C

Gate-to-Source Voltage

Package Limited)

I_DM

V_GS

Avalanche Energy

E_AS

Power Dissipation TC= 25°C

Derating Factor above 25°C

P_D

0.768

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2019V01

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