Datasheet > HGQ01N04A-G

HGQ01N04A-G

更新时间： 2024-11-13 17:00:55

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	713K
描述
PDFN5×6

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数据手册

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HGQ01N04A-G 数据手册

Silicon N-Channel Power MOSFET

HGQ01N04A-G

V_DSS

320

General Description：

HGQ01N04A-G, the silicon N-channel Enhanced VDMOSFETs, is

obtained by the high density Trench technology which reduce the

conduction loss, improve switching performance and enhance the

avalanche energy. This device is suitable for use as A load switch and

PWM applications. the package form is PDFN5*6, which accords with the

RoHS standard.

I_{D（Silicon limited）}

I_{D（Package limited）}

100

156.2

0.85

mΩ

R_DS(ON)Typ

Features：

● Fast Switching

● Low ON Resistance

● Low Gate Charge

● Low Reverse transfer capacitances

● 100% Single Pulse avalanche energy Test

● Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）：

Symbol

V_DSS

Parameter

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C_{（Silicon limited）}

Continuous Drain Current T_C= 25 °C _{(Package limited)}

Continuous Drain Current T_C= 100 °C _{(Package limited)}

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

320

I_D

100

400

I_DM

V_GS

±18

Avalanche Energy

412.1

E_AS

Power Dissipation T_C= 25 °C

156.2

P_D

Derating Factor above 25°C

1.25

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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