Datasheet > HGQ018N03A

HGQ018N03A

更新时间： 2024-11-13 17:01:15

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	856K
描述
PDFN5×6

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中文翻译

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数据手册

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HGQ018N03A 数据手册

Silicon N-Channel Power MOSFET

○

HGQ018N03A

V_DSS

190

100

General Description：

I_D

（

）

Silicon limited current

HGQ018N03A, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is PDFN5*6, which accords with the RoHS standard.

Features：

（

）

Package limited

mΩ

R_DS(ON)Typ

1.4

 Fast Switching



Low ON Resistance(Rdson≤1.8mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

E-cigarette,Electric Tool

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

190

100

400

±18

328

Continuous Drain Current Tc= 25°C₍

Limited) a1

Silicon

Continuous Drain Current T_C=100℃_{(Package Limited) a1}

Continuous Drain Current Tc= 25°C_{(Package Limited) a1}

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

I_D

I_DM

V_GS

Avalanche Energy

E_AS

Power Dissipation T_C= 25 °C

P_D

Derating Factor above 25°C

0.67

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2019V01

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