Datasheet > HBT134I

HBT134I

更新时间： 2024-10-27 23:54:47

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4A600V\|Triacs

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数据手册

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HBT134I 数据手册

Spec. No. : HI200101

Issued Date : 2001.07.01

Revised Date : 2002.03.27

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HBT134I

TRIAC

Description

Passivated, sensitive gate triacs in a plastic envelope, intended for

use in general purpose bidirectional switching and phase control

applications, where high sensitivity is required in all four quadrants.

TO-251

Quick Reference Data

Symbol

Parameter

Max.

Unit

V_DRM

I_T(RMS)

I_TSM

Repetitive peak off-state voltages

RMS on-state current

Non-repetitive peak on-state current

600

Pin Configuration

Description

Main terminal 1

Main terminal 2

tab

Symbol

1 2 3

Gate

tab

Main terminal 2

Limtiing Values

Symbol

Parameter

Min.

Max.

Units

V_DRM

I_T(RMS)

I_TSM

Repetitive peak off-state voltages

RMS on-state current

600

3.1

Non-repetitive peak on-state current

I²t

I²t for fusing

A²S

Repetitive rate of rise of on-state current after triggering

T2+ G+

A/us

T2+ G-

T2- G-

T2- G+

0.5

150

125

A/us

°C

dI_T/dt

I_GM

V_GM

P_GM

P_G(AV)

Tstg

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage Temperature Range

Operating junction temperature

HBT134I

HSMC Product Specification

12 3 4

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