Datasheet > HBT151

HBT151

更新时间： 2024-10-28 05:34:55

品牌	Logo	应用领域
华汕 - HUASHAN		可控硅整流器
页数	文件大小	规格书
4页	998K
描述
Silicon Controlled Rectifier

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HBT151 数据手册

Shantou Huashan Electronic Devices Co.,Ltd.

HBT151

Silicon Controlled Rectifier

█ Features

* Repetitive Peak Off-State Voltage : 600V

* R.M.S On-State Current(I_T(RMS)=12A)

* Average On-State Current (I_T(AV)=7.5A)

* Non-isolated Type

█ General Description

Passivated thyristors in a plastic envelope, intended for use in

applications requiring high bidirectional blocking voltage

capability and high thermal cycling performance. Typical applications

include motor control, industrial and domestic lighting, heating and static

switching.

█ Absolute Maximum Ratings（T_a=25℃ unless otherwise specified）

T_{s t g}— — Storage Temperature ------------------------------------------------------ -40~150℃

T_j— — Operating Junction Temperature --------------------------------------------------- 125℃

V_DRM— — Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V

IT（RMS）— — R.M.S On-State Current（all conduction angles）----------------------------------------------12A

I_T(AV)— — Average On-State Current (Half Sine Wave : T_C= 109 °C ) ----------------------------------------7.5A

ITSM — — Surge On-State Current (1/2 Cycle, 50Hz, Sine Wave, Non-repetitive) -------------------------- 100A

I²t — — Circuit Fusing Considerations(t = 10ms) ------------------------------------------------------------- 50A²s

P_GM— — Forward Peak Gate Power Dissipation (T_a=25℃) --------------------------------------------------- 5W

P_G(AV)— — Forward Average Gate Power Dissipation (over any 20 ms period) ----------------------------0.5W

I_FGM— — Forward Peak Gate Current -------------------------------------------------------------------------------- 2A

V_RGM— — Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V

12 3 4

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