Datasheet > HBT139DE

HBT139DE

更新时间： 2024-10-27 21:54:47

品牌	Logo	应用领域
HSMC		可控硅
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4页	62K
描述
Three Quadrant Triac

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数据手册

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HBT139DE 数据手册

Spec. No. : HE200308

Issued Date : 2003.11.01

Revised Date : 2003.11.28

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HBT139XE

Three Quadrant Triac

Description

Passivated, sensitive gate triacs in a plastic envelope, intended for use in

general purpose bidirectional switching and phase control applications,

where high sensitivity is required in all four quadrants.

TO-220AB

Quick Reference Data

Part No.

V_DRM(V)

600

I_T(RMS)(A)

I_TSM(A)

140

Quadrant

I - II - III

HBT139DE

Pin Configuration

Description

Symbol

tab

Main terminal 1

Main terminal 2

2 3

Gate

tab

Main terminal 2

Limtiing Values

Symbol

Parameter

Repetitive peak off-state voltages

RMS on-state current

Min.

Max.

Units

V_DRM

I_T(RMS)

I_TSM

600

Non-repetitive peak on-state current

I²t for fusing

140

A²S

I²t

Repetitive rate of rise of on-state current after triggering

T2+ G+

A/us

T2+ G-

A/us

dI_T/dt

T2- G-

T2- G+

I_GM

V_GM

P_GM

P_G(AV)

Tstg

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage Temperature Range

Operating junction temperature

0.5

150

125

°C

-40

°C

HBT139XE

HSMC Product Specification

12 3 4

中文翻译

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