Datasheet > HBT169M

HBT169M

更新时间： 2024-10-29 18:09:23

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	82K
描述
Thyristors

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中文翻译

获取价格

数据手册

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HBT169M 数据手册

SMD Type

Thyristor

Silicon Controlled Rectifiers

HBT169M

Features

Repetitive peak off-state voltages :400V

Average on-state current :0.5A

RMS on-state current :0.8A

Non-repetitive peak on-state current :8A

1 GATE

2 ANODE

3 CATHODE

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

400

Unit

V^DRM

and

Peak Repetitive Forward and Reverse Blocking Voltage*

V^RRM

Forward Current RMS

I^T(RMS)

I^TSM

0.8

Non-repetitive peak on-state current (t=10ms)

Non-repetitive peak on-state current (t=8.3ms)

Circuit Fusing Considerations (t = 10ms)

Repetitive rate of rise of on-state current after triggering *1

Peak gate current

I²t

A²s

A/us

0.32

d^IT/dt

I^GM

PGM

PGF(AV)

IGFM

Peak Gate Power

Forward, TA = 25

0.1

Average Gate Power

Peak Gate Current

Peak gate voltage

Forward, TA = 25

V^GM

V^GRM

R^{th j-lead}

R^{th j-a}

T^stg

Peak Gate Voltage

Reverse

Thermal resistance junction to lead *2

Thermal resistance junction to ambient *2

Storage temperature

150

125

K/W

T^J

Operating junction temperature

*1 ITM=2A; IG=10mA; dIG/dt=100mA/us)

*2 pcb mounted;lead length=4mm

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