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HBTA6A60 PDF预览

HBTA6A60

更新时间: 2024-10-28 05:34:55
品牌 Logo 应用领域
华汕 - HUASHAN 可控硅三端双向交流开关
页数 文件大小 规格书
3页 136K
描述
INNER INSULATED TYPE TRIAC (II TO-220 PACKAGE)

HBTA6A60 数据手册

 浏览型号HBTA6A60的Datasheet PDF文件第2页浏览型号HBTA6A60的Datasheet PDF文件第3页 
Shantou Huashan Electronic Devices Co.,Ltd.  
HBTA6A60  
INNER INSULATED TYPE TRIAC (II TO-220 PACKAGE)  
Features  
* Repetitive Peak Off-State Voltage: 600V  
* R.M.S On-State Current(IT(RMS)=6A)  
* High Commutation dv/dt  
*Isolation VoltageVISO=2500V AC)  
General Description  
This device is fully isolated package suitable for AC switching application,  
phase control application such as fan speed and temperature modulation  
control, lighting control and static switching relay.  
Absolute Maximum RatingsTa=25℃)  
Tstg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -40~150℃  
Tj — — Operating Junction Temperature ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -40~125℃  
PGM— — Peak Gate Power Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 5W  
VDRM— — Repetitive Peak Off-State Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 600V  
ITRMS)— — R.M.S On-State CurrentTc=94℃)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 6A  
VGM— — Peak Gate Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 10V  
IGM— — Peak Gate Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 2.0A  
ITSM— — Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 60/66A  
V — — RMS Isolation Breakdown Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 2500V  
ISO  
Electrical CharacteristicsTa=25℃)  
Symbol  
Items  
Min  
Max Unit  
Conditions  
VD=VDRM,Single Phase,Half  
Wave, TJ=125℃  
IDRM  
Repetitive Peak Off-State Current  
1.0  
mA  
V
Peak On-State Voltage  
IT=8A, Inst. Measurement  
VTM  
I+GT1  
I-GT1  
I-GT3  
V+GT1  
V-GT1  
V-GT3  
VGD  
1.6  
10  
Gate Trigger Current(Ⅰ)  
Gate Trigger Current(Ⅱ)  
Gate Trigger Current(Ⅲ)  
Gate Trigger Voltage(Ⅰ)  
Gate Trigger Voltage(Ⅱ)  
mA VD=6V, RL=10 ohm  
mA VD=6V, RL=10 ohm  
mA VD=6V, RL=10 ohm  
10  
10  
1.5  
1.5  
1.5  
V
V
V
V
VD=6V, RL=10 ohm  
VD=6V, RL=10 ohm  
VD=6V, RL=10 ohm  
TJ=125,VD=1/2VDRM  
Gate Trigger Voltage(Ⅲ)  
Non-Trigger Gate Voltage  
Critical Rate of Rise of Off-State  
Voltage at Commutation  
0.2  
5.0  
(dv/dt)c  
V/µS TJ=125,VD=2/3VDRM (di/dt)c=-3A/ms  
Holding Current  
IH  
10  
mA  
Thermal Resistance  
Junction to case  
Rth(j-c)  
3.8 /W  

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