Datasheet > 暂无类别数据> HAF2002

HAF2002

更新时间： 2024-09-24 07:02:43

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
9页	94K
描述
Silicon N Channel MOSFET Series Power Switching

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HAF2002 数据手册

HAF2002

Silicon N Channel MOS FET Series

Power Switching

REJ03G1135-0300

(Previous: ADE-208-503A)

Rev.3.00

Sep 07, 2005

Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Features

•

Logic level operation (4 to 6 V Gate drive)

High endurance capability against to the short circuit

Built-in the over temperature shut-down circuit

Latch type shut-down operation (Need 0 voltage recovery)

Outline

RENESAS Package code: PRSS0003AD-A

(Package name: TO-220FM)

Gate resistor

1. Gate

2. Drain

3. Source

Tempe-

rature

Sensing

Circuit

Gate

Latch

Circuit

Shut-

down

Circuit

Rev.3.00 Sep 07, 2005 page 1 of 8

12 3 4 5 6 7...9

中文翻译

下载PDF

与HAF2002相关器件

型号	品牌	获取价格	描述	数据表
HAF2002-90	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching
HAF2005	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching
HAF2005	HITACHI	获取价格	Silicon N Channel MOS FET Series Power Switching
HAF2005-90	RENESAS	获取价格	40A, 60V, 0.033ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, SC-67, TO-220FM, 3 PIN
HAF2006R	HITACHI	获取价格	Power Field-Effect Transistor, 0.24ohm, MS-012AA, SOP-8
HAF2007	RENESAS	获取价格	Silicon N Channel MOSFET Series Power Switching
HAF2007	HITACHI	获取价格	Silicon N Channel MOS FET Series Power Switching
HAF2007(L)	RENESAS	获取价格	5A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
HAF2007(L)\|HAF2007(S)	ETC	获取价格
HAF2007(S)	HITACHI	获取价格	Power Field-Effect Transistor, 5A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal