是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PDSO-C2 | Reach Compliance Code: | compliant |
风险等级: | 5.73 | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1.1 V | JEDEC-95代码: | DO-214AC |
JESD-30 代码: | R-PDSO-C2 | 最大非重复峰值正向电流: | 40 A |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
最大输出电流: | 1 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
最大重复峰值反向电压: | 50 V | 最大反向恢复时间: | 1 µs |
子类别: | Rectifier Diodes | 表面贴装: | YES |
端子形式: | C BEND | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GN1A_05 | EIC |
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GLASS PASSIVATED JUNCTION | |
GN1A_15 | GOOD-ARK |
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Surface Mount Glass Passivated Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current | |
GN1A3Q | NEC |
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MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD | |
GN1A3Q-T1 | NEC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M | |
GN1A3Q-T2 | NEC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M | |
GN1A4M | NEC |
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MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR | |
GN1A4M-A | NEC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M | |
GN1A4M-T1 | NEC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M | |
GN1A4M-T1-A | RENESAS |
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GN1A4M-T1-A | |
GN1A4M-T2 | NEC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M |