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GN1A3Q-T2 PDF预览

GN1A3Q-T2

更新时间: 2024-11-26 14:31:11
品牌 Logo 应用领域
日电电子 - NEC 开关光电二极管晶体管
页数 文件大小 规格书
34页 1029K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER MINIMOLD, SC-70, 3 PIN

GN1A3Q-T2 技术参数

生命周期:Obsolete包装说明:SUPER MINIMOLD, SC-70, 3 PIN
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):35
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

GN1A3Q-T2 数据手册

 浏览型号GN1A3Q-T2的Datasheet PDF文件第2页浏览型号GN1A3Q-T2的Datasheet PDF文件第3页浏览型号GN1A3Q-T2的Datasheet PDF文件第4页浏览型号GN1A3Q-T2的Datasheet PDF文件第5页浏览型号GN1A3Q-T2的Datasheet PDF文件第6页浏览型号GN1A3Q-T2的Datasheet PDF文件第7页 

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GN1A4M-T2 NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
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MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A4P-T2 NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M