Datasheet > GN1A_15

GN1A_15

更新时间： 2024-11-27 01:25:03

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
2页	201K
描述
Surface Mount Glass Passivated Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 1.0 Ampere

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GN1A_15 数据手册

GN1A thru GN1M

Surface Mount Glass Passivated Rectifiers

Reverse Voltage 50 to 1000 Volts Forward Current 1.0 Ampere

Features

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

For surface mounted applications

Low profile package

Built-in strain relief, ideal for automated placement

Glass passivated chip junction

High temperature soldering:

250^oC/10 seconds at terminals

Mechanical Data

Case: JEDEC DO-214AC (SMA) molded plastic over glass

passivated chip

Terminals: Solder plated, solderable per MIL-STD-750, Method

2026

Polarity: Color band denotes cathode end

Weight: 0.002 ounce, 0.064 gram

Maximum Ratings and Electrical Characteristics

Ratings at 25^oC ambient temperature unless otherwise specified.

Parameter

Symbols

GN1A

GN1B

GN1D

GN1G

GN1J

GN1K

GN1M

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

Volts

Amp

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current (see fig.1)

I_F(AV)

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load(JEDEC Method) T_L=110^oC

I_FSM

V_F

40.0

1.0

30.0

5.0

Amps

Volts

Maximum instantaneous forward voltage at 1.0A

1.10

Maximum DC reverse current

at rated DC blocking voltage

@T_A=25^oC

I_R

@T_A=125^oC

Typical reverse recovery time at

t_rr

1.0

I_F=0.5A, I_R=1.0A, I =0.25A

Typical junction capacitance at 4.0V, 1MHz

Typical thermal resistance (NOTE 1)

C_J

R_θJA

R_θJL

^oC/W

Operating junction temperature range

Storage temperature range

T_J

-55 to +150

^oC

T_STG

Notes:

1. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas

中文翻译

下载PDF

与GN1A_15相关器件

型号	品牌	获取价格	描述	数据表
GN1A3Q	NEC	获取价格	MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
GN1A3Q-T1	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A3Q-T2	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A4M	NEC	获取价格	MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
GN1A4M-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A4M-T1	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A4M-T1-A	RENESAS	获取价格	GN1A4M-T1-A
GN1A4M-T2	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1A4M-T2-A	RENESAS	获取价格	GN1A4M-T2-A
GN1A4P	NEC	获取价格	MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR