Datasheet > GAN063-650WSA

GAN063-650WSA

更新时间： 2024-11-14 11:13:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	282K
描述
650 V, 50 mΩ Gallium Nitride (GaN) FETProduction

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中文翻译

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技术参数
数据手册

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GAN063-650WSA 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	JESD-609代码：	e3
湿度敏感等级：	1	端子面层：	Tin (Sn)
Base Number Matches：	1

GAN063-650WSA 数据手册

GAN063-650WSA

650 V, 50 mΩ Gallium Nitride (GaN) FET

20 March 2020

Product data sheet

1. General description

The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that

combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET

technologies — offering superior reliability and performance.

2. Features and benefits

•

Ultra-low reverse recovery charge

•

Simple gate drive (0 V to +10 V or 12 V)

Robust gate oxide (±20 V capability)

High gate threshold voltage (+4 V) for very good gate bounce immunity

Very low source-drain voltage in reverse conduction mode

Transient over-voltage capability (800 V)

3. Applications

•

Hard and soft switching converters for industrial and datacom power

Bridgeless totempole PFC

PV and UPS inverters

Servo motor drives

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

650

34.5

143

175

Unit

drain-source voltage

drain current

-55 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 25 A; T_j= 25 °C

mΩ

Q_GD

gate-drain charge

total gate charge

I_D= 25 A; V_DS= 400 V; V_GS= 10 V;

T_j= 25 °C

Q_G(tot)

Source-drain diode

Q_rrecovered charge

I_S= 25 A; dI_S/dt = -1000 A/µs;

V_GS= 0 V; V_DS= 400 V; Fig. 14

125

12 3 4 5 6 7...11

中文翻译

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